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  Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation

Alonso, M., Cimino, R., & Horn, K. (1990). Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation. Physical Review Letters, 64(16), 1947-1950. doi:/10.1103/PhysRevLett.64.1947.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0006-9F93-1 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-AE98-B
Genre: Journal Article

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PhysRevLett.64.1947.pdf (Publisher version), 295KB
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1990
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 Creators:
Alonso, Maria1, Author           
Cimino, Roberto1, Author           
Horn, Karsten1, Author           
Affiliations:
1Fritz Haber Institute, Max Planck Society, ou_24021              

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 Abstract: Photoelectron spectra from metal overlayers on GaP(110) show that the photoionization light source may induce a surface photovoltage, causing an energy shift of valence- and core-level peaks. We analyze the dependence of this surface photovoltage on metal coverage, substrate doping, and temperature. The presence of a surface photovoltage seriously affects the determination of surface band bending by photoelectron spectroscopy, a technique which is generally thought to reflect the equilibrium electronic structure of metal-semiconductor interfaces.

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Language(s): eng - English
 Dates: 1989-11-291990-04-16
 Publication Status: Issued
 Pages: 4
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: /10.1103/PhysRevLett.64.1947
 Degree: -

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Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
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Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: 4 Volume / Issue: 64 (16) Sequence Number: - Start / End Page: 1947 - 1950 Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1