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  Probing the low-temperature limit of the quantum anomalous Hall effect

Pan, L., Liu, X., He, Q. L., Stern, A., Yin, G., Che, X., et al. (2020). Probing the low-temperature limit of the quantum anomalous Hall effect. Science Advances, 6: eaaz3595, pp. 1-9. doi:10.1126/sciadv.aaz3595.

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 Creators:
Pan, Lei1, Author
Liu, Xiaoyang1, Author
He, Qing Lin1, Author
Stern, Alexander2, Author              
Yin, Gen1, Author
Che, Xiaoyu1, Author
Shao, Qiming1, Author
Zhang, Peng1, Author
Deng, Peng1, Author
Yang, Chao-Yao1, Author
Casas, Brian1, Author
Choi, Eun Sang1, Author
Xia, Jing1, Author
Kou, Xufeng1, Author
Wang, Kang L.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462              

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Free keywords: Film thickness, Semiconductor doping, Temperature, Anomalous hall effects, Doping profiles, High temperature, Low temperature limit, Magnetic ordering temperatures, Material systems, Temperature regimes, Weak ferromagnetism, Quantum Hall effect
 Abstract: Quantum anomalous Hall effect has been observed in magnetically doped topological insulators. However, full quantization, up until now, is limited within the sub-1 K temperature regime, although the material's magnetic ordering temperature can go beyond 100 K. Here, we study the temperature limiting factors of the effect in Cr-doped (BiSb)2Te3 systems using both transport and magneto-optical methods. By deliberate control of the thin-film thickness and doping profile, we revealed that the low occurring temperature of quantum anomalous Hall effect in current material system is a combined result of weak ferromagnetism and trivial band involvement. Our findings may provide important insights into the search for high-temperature quantum anomalous Hall insulator and other topologically related phenomena. © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Language(s): eng - English
 Dates: 2020-06-172020-06-17
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1126/sciadv.aaz3595
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Title: Science Advances
  Other : Sci. Adv.
Source Genre: Journal
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Publ. Info: Washington : AAAS
Pages: - Volume / Issue: 6 Sequence Number: eaaz3595 Start / End Page: 1 - 9 Identifier: ISSN: 2375-2548
CoNE: https://pure.mpg.de/cone/journals/resource/2375-2548