English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Al5+αSi5+δN12, a new Nitride compound

Dagher, R., Lymperakis, L., Delaye, V., Largeau, L., Michon, A., Brault, J., et al. (2019). Al5+αSi5+δN12, a new Nitride compound. Scientific Reports, 9(1): 15907. doi:10.1038/s41598-019-52363-7.

Item is

Basic

show hide
Genre: Journal Article

Files

show Files
hide Files
:
s41598-019-52363-7.pdf (Supplementary material), 2MB
Name:
s41598-019-52363-7.pdf
Description:
Open Access
OA-Status:
Visibility:
Public
MIME-Type / Checksum:
application/pdf / [MD5]
Technical Metadata:
Copyright Date:
-
Copyright Info:
-

Locators

show

Creators

show
hide
 Creators:
Dagher, Roy1, 2, Author           
Lymperakis, Liverios3, Author           
Delaye, Vincent2, Author           
Largeau, Ludovic4, Author           
Michon, Adrien1, Author           
Brault, Julien1, Author           
Vénnègues, Phillippe1, Author           
Affiliations:
1Université Côte d’Azur, CRHEA-CNRS, rue B. Grégory, Valbonne, F-06560, France, ou_persistent22              
2Université Grenoble Alpes, CEA, LETI, MINATEC Campus, Grenoble, F-38054, France, ou_persistent22              
3Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
4C2N-CNRS/Université Paris-Sud - Université Paris-Saclay, 10 Boulevard Thomas Gobert, Palaiseau, 91120, France, ou_persistent22              

Content

show
hide
Free keywords: -
 Abstract: The family of III-Nitride semiconductors has been under intensive research for almost 30 years and has revolutionized lighting applications at the dawn of the 21st century. However, besides the developments and applications achieved, nitride alloys continue to fuel the quest for novel materials and applications. We report on the synthesis of a new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350 °C and 1550 °C. The structure and stoichiometry of this compound are investigated by high resolution transmission electron microscopy (TEM) techniques and energy dispersive X-Ray (EDX) spectroscopy. Results are supported by density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where the anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along lt;0001gt;: The first one exhibits a ×3 periodicity along lt;11–20gt; with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by an equal number of Si and Al atoms. Assuming a semiconducting alloy, a range of stoichiometries is proposed, Al5+αSi5+δN12 with α being between −2/3 and 1/4 and δ between 0 and 3/4. © 2019, The Author(s).

Details

show
hide
Language(s): eng - English
 Dates: 2019-11-042019-12-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1038/s41598-019-52363-7
 Degree: -

Event

show

Legal Case

show

Project information

show hide
Project name : The part of this work done on the NanoCharacterisation PlatForm (PFNC) was supported by the “Recherches Technologiques de Base” Program of the French Ministry of Research. PV wants to thank CP2M Marseille for the access to the objective-corrected TITAN microscope and T. Neisus (University P. Cezanne, Marseille) for his expert help in the use of this microscope. J.Y. Duboz and B. Vinter (CRHEA) are gratefully acknowledged for their critical reading of the manuscript.
Grant ID : -
Funding program : -
Funding organization : Max Planck Society

Source 1

show
hide
Title: Scientific Reports
  Abbreviation : Sci. Rep.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: London, UK : Nature Publishing Group
Pages: - Volume / Issue: 9 (1) Sequence Number: 15907 Start / End Page: - Identifier: ISSN: 2045-2322
CoNE: https://pure.mpg.de/cone/journals/resource/2045-2322