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  Surface and bulk electronic structure of aluminium diboride

Sunko, V., Milosavljević, D., Mazzola, F., Clark, O. J., Burkhardt, U., Kim, T. K., et al. (2020). Surface and bulk electronic structure of aluminium diboride. Physical Review B, 102(3): 035143, pp. 1-9. doi:10.1103/PhysRevB.102.035143.

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Sunko, V.1, Autor           
Milosavljević, D.1, Autor           
Mazzola, F.2, Autor
Clark, O. J.2, Autor
Burkhardt, U.3, Autor           
Kim, T. K.2, Autor
Rosner, H.1, Autor           
Grin, Yu.4, Autor           
Mackenzie, A. P.5, Autor           
King, P. D. C.2, Autor
Affiliations:
1Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462              
2External Organizations, ou_persistent22              
3Ulrich Burkhardt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863422              
4Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              
5Andrew Mackenzie, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863463              

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 Zusammenfassung: We report a combined experimental and theoretical study of the surface and bulk electronic structure of aluminium diboride, a nonsuperconducting sister compound of the superconductor MgB2. We perform angle-resolved photoemission measurements with variable photon energy, and compare them to density functional theory calculations to disentangle the surface and bulk contributions to the measured spectra. Aluminium diboride is known to be aluminium deficient, Al1-delta B2, which would be expected to lead to a hole doping as compared to the nominally stoichimoetric compound. Nonetheless, we find that the bulk a states, which mediate superconductivity in MgB2, remain more than 600 meV below the Fermi level. However, we also observe a states originating from the boron terminated surface, with an order of magnitude smaller binding energy of 70 meV, and demonstrate how surface hole-doping can bring these across the Fermi level.

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Sprache(n): eng - English
 Datum: 2020-07-222020-07-22
 Publikationsstatus: Erschienen
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 Ort, Verlag, Ausgabe: -
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 Art der Begutachtung: -
 Identifikatoren: ISI: 000550992900002
DOI: 10.1103/PhysRevB.102.035143
 Art des Abschluß: -

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Titel: Physical Review B
  Kurztitel : Phys. Rev. B
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Woodbury, NY : American Physical Society
Seiten: - Band / Heft: 102 (3) Artikelnummer: 035143 Start- / Endseite: 1 - 9 Identifikator: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008