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  Structure and vibrational dynamics of interfacial Sn layers in Sn/Si multilayers

Roldan Cuenya, B., Keune, W., Sturhahn, W., Toellner, T. S., & Hu, M. Y. (2001). Structure and vibrational dynamics of interfacial Sn layers in Sn/Si multilayers. Physical Review B, 64(23): 235321. doi:10.1103/PhysRevB.64.235321.

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PhysRevB.64.235321.pdf (Publisher version), 188KB
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PhysRevB.64.235321.pdf
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2001
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Roldan Cuenya, Beatriz1, Author           
Keune, W.1, Author
Sturhahn, W.2, Author
Toellner, T. S.2, Author
Hu, M. Y.2, Author
Affiliations:
1Department of Physics, University of Duisburg-Essen, ou_persistent22              
2Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, ou_persistent22              

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 Abstract: The structure and vibrational dynamics of room-temperature-grown nanoscale Sn/amorphous (a-)Si multilayers have been studied by x-ray diffraction, Raman scattering, 119Sn Mössbauer spectroscopy, and 119Sn nuclear-resonant inelastic x-ray scattering (NRIXS) of synchrotron radiation. With increasing Sn-layer thickness, the formation of β-Sn was observed, except at the Sn/Si interfaces, where a 10-Å-thick metastable pure amorphous-α-Sn-like layer remains stabilized. By means of NRIXS we have measured the Sn-projected vibrational density of states (VDOS) in these multilayers (in particular, at the interfaces), and in 500-Å-thick epitaxial α-Sn films on InSb(001) as a reference. Further, the Sn-specific Lamb-Mössbauer factor (f factor), mean kinetic energy per atom, mean atomic force constant, and vibrational entropy per atom were obtained. The VDOS of the amorphous-α-Sn-like interface layer is observed to be distinctly different from that of (bulk) α-Sn and β-Sn, and its prominent vibrational energies are found to scale with those of amorphous Ge and Si. The observed small difference in vibrational entropy (ΔS/kB=+0.17±0.05 per atom) between α-Sn and interfacial amorphous-α-like Sn does not account for the stability of the latter phase.

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Language(s): eng - English
 Dates: 2001-04-122001-11-272001-12-15
 Publication Status: Issued
 Pages: 12
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.64.235321
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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: 12 Volume / Issue: 64 (23) Sequence Number: 235321 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008