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  Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films

Fornari, C. I., Bentmann, H., Morelhão, S. L., Peixoto, T. R. F., Rappl, P. H. O., Tcakaev, A.-V., et al. (2020). Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films. The Journal of Physical Chemistry C, 124(29), 16048-16057. doi:10.1021/acs.jpcc.0c05077.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0007-0AB3-4 Version Permalink: http://hdl.handle.net/21.11116/0000-0007-0B20-9
Genre: Journal Article

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 Creators:
Fornari , Celso I.1, Author
Bentmann, Hendrik1, Author
Morelhão, Sérgio L.1, Author
Peixoto, Thiago R. F.1, Author
Rappl, Paulo H. O.1, Author
Tcakaev, Abdul-Vakhab1, Author
Zabolotnyy, Volodymyr1, Author
Kamp, Martin1, Author
Lee, Tien-Lin1, Author
Min, Chul-Hee1, Author
Kagerer, Philipp1, Author
Vidal, Raphael C.1, Author
Isaeva, Anna1, Author
Ruck, Michael2, Author              
Hinkov, Vladimir1, Author
Reinert, Friedrich1, Author
Abramof, Eduardo1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Michael Ruck, Max Planck Fellow, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863444              

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 Abstract: In the field of topological materials, the interaction between band topology and magnetism remains a current frontier for the advancement of new topological states and spintronic functionalities. Doping with rare-earth elements with large magnetic moments is a current approach to exploit the phenomenology of such interaction. However, dopant solubility into the main matrix plays a major role. In this sense, the present work is focused on elucidating how Eu incorporates into Bi2Te3 lattice as a function of doping. This work reports a systematic investigation of the structural and electronic properties of bismuth telluride epitaxial layers doped with Eu. Bi2Te3 films were grown by molecular beam epitaxy on (111) BaF2 substrates with nominal Eu doping ranging from 0% up to 9%. X-ray diffraction analysis and scanning transmission electron microscopy reveal that Eu atoms enter substitutionally on Bi sites up to 4% of Eu doping. In contrast, the 9% Eu-doped sample contains epitaxially oriented nanoclusters of EuTe. X-ray photoelectron and absorption spectroscopies show that Eu atoms enter the Bi2Te3 crystal matrix in the divalent Eu2+ state for all Eu concentrations. Angle-resolved photoemission experiments indicate that the topological surface state is preserved in the presence of the local magnetic moments introduced by the Eu impurities.

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Language(s): eng - English
 Dates: 2020-06-252020-06-25
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000555507000040
DOI: 10.1021/acs.jpcc.0c05077
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Title: The Journal of Physical Chemistry C
  Abbreviation : J. Phys. Chem. C
Source Genre: Journal
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Publ. Info: Washington, D.C. : American Chemical Society
Pages: - Volume / Issue: 124 (29) Sequence Number: - Start / End Page: 16048 - 16057 Identifier: ISSN: 1932-7447
CoNE: https://pure.mpg.de/cone/journals/resource/954926947766