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  Thermoelectric properties of n-type half-Heusler NbCoSn with heavy-element Pt substitution

Serrano-Sánchez, F., Luo, T., Yu, J., Xie, W., Le, C., Auffermann, G., et al. (2020). Thermoelectric properties of n-type half-Heusler NbCoSn with heavy-element Pt substitution. Journal of Materials Chemistry A, 8(29), 14822-14828. doi:10.1039/d0ta04644b.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0007-0C97-2 Version Permalink: http://hdl.handle.net/21.11116/0000-0007-0CA4-3
Genre: Journal Article

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 Creators:
Serrano-Sánchez, Federico1, Author              
Luo, Ting2, Author
Yu, Junjie2, Author
Xie, Wenjie2, Author
Le, Congcong1, Author              
Auffermann, Gudrun3, Author              
Weidenkaff, Anke2, Author
Zhu, Tiejun2, Author
Zhao, Xinbing2, Author
Alonso, Jose A.2, Author
Gault, Baptiste2, Author
Felser, Claudia4, Author              
Fu, Chenguang1, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2External Organizations, ou_persistent22              
3Gudrun Auffermann, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863432              
4Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: Half-Heusler compounds with a valence electron count of 18, including ZrNiSn, ZrCoSb, and NbFeSb, are good thermoelectric materials owing to favorable electronic structures. Previous computational studies had predicted a high electrical power factor in another half-Heusler compound NbCoSn, but it has not been extensively investigated experimentally. Herein, the synthesis, structural characterization, and thermoelectric properties of the heavy-element Pt-substituted NbCoSn compounds are reported. Pt is found to be an effective substitute enabling the optimization of electrical power factor and simultaneously leading to a strong point defect scattering of phonons and the suppression of lattice thermal conductivity. Post-annealing significantly improves the carrier mobility, which is ascribed to the decreased grain boundary scattering of electrons. As a result, a maximum power factor of similar to 3.4 mW m(-1)K(-2)is obtained at 600 K. In conjunction with the reduced lattice thermal conductivity, a maximum figure of meritzTof similar to 0.6 is achieved at 773 K for the post-annealed NbCo0.95Pt0.05Sn, an increase of 100% compared to that of NbCoSn. This work highlights the important roles that the dopant element and microstructure play in the thermoelectric properties of half-Heusler compounds.

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Language(s): eng - English
 Dates: 2020-07-142020-07-14
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000553632500041
DOI: 10.1039/d0ta04644b
 Degree: -

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Title: Journal of Materials Chemistry A
  Abbreviation : J. Mater. Chem. A
Source Genre: Journal
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Publ. Info: Cambridge, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 8 (29) Sequence Number: - Start / End Page: 14822 - 14828 Identifier: ISSN: 2050-7488
CoNE: https://pure.mpg.de/cone/journals/resource/2050-7488