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  Band bending in the initial stages of Schottky-barrier formation for gallium on Si(113)

Althainz, P., Myler, U., & Jacobi, K. (1990). Band bending in the initial stages of Schottky-barrier formation for gallium on Si(113). Physical Review B, 41(5), 2849-2854. doi:10.1103/PhysRevB.41.2849.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0007-4372-D Version Permalink: https://hdl.handle.net/21.11116/0000-0007-4375-A
Genre: Journal Article

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PhysRevB.41.2849.pdf (Publisher version), 352KB
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https://hdl.handle.net/21.11116/0000-0007-4374-B
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PhysRevB.41.2849.pdf
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1990
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 Creators:
Althainz, P.1, Author           
Myler, U.1, Author           
Jacobi, Karl2, Author           
Affiliations:
1Fritz Haber Institute, Max Planck Society, ou_24021              
2Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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 Abstract: We present angle-resolved ultraviolet and soft-x-ray photoelectron spectroscopy results for the Schottky-barrier formation of Ga on p-type Si(113). For the first 0.08 monolayer of Ga, the band bending increases. For higher coverages, it decreases monotonically until it reaches its final value at about 2 monolayers. This change of band bending is found for a Si surface for the first time and supports a recent model calculation. The final barrier height is 0.32±0.10 eV, in good agreement with the values found for low-index surfaces.

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Language(s): eng - English
 Dates: 1989-05-121989-08-031990-02-15
 Publication Status: Issued
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.41.2849
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: 6 Volume / Issue: 41 (5) Sequence Number: - Start / End Page: 2849 - 2854 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008