Si(5,5,12) - A Stable Surface With Very Large Unit Cell

Xing, Yirong; Ranke, Wolfgang; Hu, Xiaoming

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Si(5,5,12) - A Stable Surface With Very Large Unit Cell

Xing, Y., Ranke, W., & Hu, X. (1998). Si(5,5,12) - A Stable Surface With Very Large Unit Cell. Chinese Journal of Semiconductors, (4), 254-260. Retrieved from http://caod.oriprobe.com/articles/2054882/si_5_5_12____yi_ge_da_yuan_bao_de_wen_ding_biao_mian_.htm.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0007-6A88-9 Version Permalink: https://hdl.handle.net/21.11116/0000-0007-6A95-A

Genre: Journal Article

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Creators:
Xing, Yirong, Author
Ranke, Wolfgang¹, Author
Hu, Xiaoming, Author

Affiliations:
1Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023

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Language(s): eng - English

Dates: Date issued: 1998-04

Publication Status: Issued

Pages: 7

Publishing info: -

Table of Contents: -

Rev. Type: Peer

Identifiers: URI: http://caod.oriprobe.com/articles/2054882/si_5_5_12____yi_ge_da_yuan_bao_de_wen_ding_biao_mian_.htm

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Title: Chinese Journal of Semiconductors

Source Genre: Journal

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Publ. Info: New York : Allerton Press

Pages: 7 Volume / Issue: (4) Sequence Number: - Start / End Page: 254 - 260 Identifier: ISSN: 0253-4177
CoNE: https://pure.mpg.de/cone/journals/resource/110978978383149