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  Influence of strain on the indium incorporation in (0001) GaN

Schulz, T., Lymperakis, L., Anikeeva, M., Siekacz, M., Wolny, P., Markurt, T., et al. (2020). Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials, 4(7): 073404. doi:10.1103/PhysRevMaterials.4.073404.

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Schulz, Tobias1, Author           
Lymperakis, Liverios2, Author           
Anikeeva, Mariia3, Author           
Siekacz, Marcin4, Author           
Wolny, Paweł5, Author           
Markurt, Toni6, Author           
Albrecht, Martin R.7, Author           
1Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany, ou_persistent22              
2Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
3Leibniz-Institute for Crystal Growth, Max-Born-Straße 2, 12489 Berlin, Germany, ou_persistent22              
4Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, ou_persistent22              
5Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw, 01-142, Poland, ou_persistent22              
6Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany, ou_persistent22              
7Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin, Germany, ou_persistent22              


Free keywords: Buffer layers; Density functional theory; High resolution transmission electron microscopy; III-V semiconductors; Indium; Indium metallography; Lattice mismatch; Molecular beam epitaxy; Semiconductor alloys, DFT calculation; Effect of strain; Growth conditions; In compositions; In-plane lattices; MBE growth; Strained layers, Gallium nitride
 Abstract: The incorporation of indium in GaN (0001) surfaces in dependence of strain is investigated by combining molecular-beam epitaxy (MBE) growth, quantitative transmission electron microscopy, and density-functional theory (DFT) calculations. Growth experiments were conducted on GaN, as well as on 30±2 partially relaxed In0.19Ga0.81N buffer layers, serving as substrates. Despite the only 0.6 larger in-plane lattice constant of GaN provided by the buffer layer, our experiments reveal that the In incorporation increases by more than a factor of two for growth on the In0.19Ga0.81N buffer, as compared to growth on GaN. DFT calculations reveal that the decreasing chemical potential due to the reduced lattice mismatch stabilizes the In-N bond at the surface. Depending on the growth conditions (metal rich or N rich), this promotes the incorporation of higher In contents into a coherently strained layer. Nevertheless, the effect of strain is highly nonlinear. As a consequence of the different surface reconstructions, growth on relaxed InxGa1-xN buffers appears more suitable for metal-rich MBE growth conditions with regard to achieving higher In compositions. © 2020 American Physical Society.


Language(s): eng - English
 Dates: 2020-07-24
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevMaterials.4.073404
 Degree: -



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Project name : This work has been partially supported by the European Union within SPRInG Grant No. 642574. We thank E. Grzanka for x-ray diffraction and G. Staszczak for photoluminescence measurements.
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Source 1

Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mater.
Source Genre: Journal
Publ. Info: College Park, MD : American Physical Society
Pages: 7 Volume / Issue: 4 (7) Sequence Number: 073404 Start / End Page: - Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953