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  Topological phase transitions induced by disorder in magnetically doped (Bi, Sb)2 Te3 thin films

Okugawa, T., Tang, P., Rubio, A., & Kennes, D. M. (2020). Topological phase transitions induced by disorder in magnetically doped (Bi, Sb)2 Te3 thin films. Physical Review B, 102(20): 201405. doi:10.1103/PhysRevB.102.201405.

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PhysRevB.102.201405.pdf (Publisher version), 2MB
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In the Supplemental Material we present details about the Born approximation, lead effect, and the topological phase transition driven by disorder for 4QLs.
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https://dx.doi.org/10.1103/PhysRevB.102.201405 (Publisher version)
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https://arxiv.org/abs/2008.00757 (Preprint)
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 Creators:
Okugawa, T.1, Author
Tang, P.2, 3, 4, Author              
Rubio, A.3, 4, 5, 6, Author              
Kennes, D. M.1, 3, 4, Author              
Affiliations:
1Institut für Theorie der Statistischen Physik, RWTH Aachen, ou_persistent22              
2School of Materials Science and Engineering, Beihang University, ou_persistent22              
3Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
4Center for Free Electron Laser Science, ou_persistent22              
5Center for Computational Quantum Physics, Simons Foundation Flatiron Institute, New York, ou_persistent22              
6Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del País Vasco, UPV/EHU, ou_persistent22              

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 Abstract: We study disorder induced topological phase transitions in magnetically doped (Bi, Sb)2 Te3 thin films by using large scale transport simulations of the conductance through a disordered region coupled to reservoirs in the quantum spin Hall regime. Besides the disorder strength, the rich phase diagram also strongly depends on the magnetic exchange field, the Fermi level, and the initial topological state in the undoped and clean limit of the films. In an initially trivial system at nonzero exchange field, varying the disorder strength can induce a sequence of transitions from a normal insulating to a quantum anomalous Hall, then a spin-Chern insulating, and finally an Anderson insulating state. In contrast, for a system which is initially in the topological phase, a similar sequence can be induced by the disorder, but only starting from the quantum anomalous Hall phase that is also stabilized by the weak disorder. Varying the Fermi level we find a similarly rich phase diagram, including transitions from the quantum anomalous Hall to the spin-Chern insulating state via a state that behaves as a mixture of a quantum anomalous Hall and a metallic state, akin to recent experimental reports.

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Language(s): eng - English
 Dates: 2020-08-032020-11-032020-11-172020-11-15
 Publication Status: Published in print
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 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.102.201405
arXiv: 2008.00757
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Title: Physical Review B
Source Genre: Journal
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Pages: - Volume / Issue: 102 (20) Sequence Number: 201405 Start / End Page: - Identifier: ISSN: 2469-9950
ISSN: 2469-9969