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  First-principles investigation of charged dopants and dopant-vacancy defect complexes in monolayer MoS2

Tan, A. M. Z., Freysoldt, C., & Hennig, R. G. (2020). First-principles investigation of charged dopants and dopant-vacancy defect complexes in monolayer MoS2. Physical Review Materials, 4(11): 114002. doi:10.1103/PhysRevMaterials.4.114002.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0007-6F3A-D Version Permalink: https://hdl.handle.net/21.11116/0000-0009-0171-6
Genre: Journal Article

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 Creators:
Tan, Anne Marie Z.1, 2, Author           
Freysoldt, Christoph3, Author           
Hennig, Richard G.2, 4, Author           
Affiliations:
1Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA, ou_persistent22              
2Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA, ou_persistent22              
3Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
4Department of Materals Science and Engineering, University of Florida, Gainesville, FL 32611-6400, USA, ou_persistent22              

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Language(s): eng - English
 Dates: 2020-11-05
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevMaterials.4.114002
 Degree: -

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Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mater.
Source Genre: Journal
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Affiliations:
Publ. Info: College Park, MD : American Physical Society
Pages: 11 Volume / Issue: 4 (11) Sequence Number: 114002 Start / End Page: - Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953