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  Thermoelectric Performance of the Half-Heusler Phases RNiSb (R = Sc, Dy, Er, Tm, Lu): High Mobility Ratio between Majority and Minority Charge Carriers

Ciesielski, K., Synoradzki, K., Veremchuk, I., Skokowski, P., Szymanski, D., Grin, Y., et al. (2020). Thermoelectric Performance of the Half-Heusler Phases RNiSb (R = Sc, Dy, Er, Tm, Lu): High Mobility Ratio between Majority and Minority Charge Carriers. Physical Review Applied, 14(5): 054046, pp. 1-15. doi:10.1103/PhysRevApplied.14.054046.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0007-8D3C-8 Version Permalink: http://hdl.handle.net/21.11116/0000-0007-8D3F-5
Genre: Journal Article

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Ciesielski, K.1, Author
Synoradzki, K.1, Author
Veremchuk, I.2, Author              
Skokowski, P.1, Author
Szymanski, D.1, Author
Grin, Yu.3, Author              
Kaczorowski, D.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Igor Veremchuk, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863411              
3Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              

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 Abstract: Deeper understanding of electrical and thermal transport is critical for further development of thermoelectric materials. Here we describe the thermoelectric performance of a group of rare-earth-bearing half-Heusler phases determined in a wide temperature range. Polycrystalline samples of ScNiSb, DyNiSb, ErNiSb, TmNiSb, and LuNiSb are synthesized by arc melting and densified by spark plasma sintering. They are characterized by powder x-ray diffraction and scanning electron microscopy. The physical properties are studied by means of heat-capacity and Hall-effect measurements performed in the temperature range from 2 to 300 K, as well as electrical-resistivity, Seebeck-coefficient, and thermal-conductivity measurements performed in the temperature range from 2 to 950 K. All the materials except TmNiSb are found to be narrow-gap intrinsic p-type semiconductors with rather light charge carriers. In TmNiSb, the presence of heavy holes with large weighted mobility is evidenced by the highest power factor among the series (17 mu W K-2 cm(-1) at 700 K). The experimental electronic relaxation time calculated with the parabolic band formalism is found to range from 0.8 x 10(-14) to 2.8 x 10(-14) s. In all the materials studied, the thermal conductivity is between 3 and 6 W m(-1) K-1 near room temperature (i.e., smaller than in other pristine d-electron half-Heusler phases reported in the literature). The experimental observation of the reduced thermal conductivity appears fully consistent with the estimated low sound velocity as well as strong point-defect scattering revealed by Debye-Callaway modeling. Furthermore, analysis of the bipolar contribution to the measured thermal conductivity yields abnormally large differences between the mobilities of n-type and p-type carriers. The latter feature makes the compounds examined excellent candidates for further optimization of their thermoelectric performance via electron doping.

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Language(s): eng - English
 Dates: 2020-11-192020-11-19
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1103/PhysRevApplied.14.054046
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Title: Physical Review Applied
  Abbreviation : Phys. Rev. Appl.
Source Genre: Journal
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Publ. Info: College Park, Md. [u.a.] : American Physical Society
Pages: - Volume / Issue: 14 (5) Sequence Number: 054046 Start / End Page: 1 - 15 Identifier: ISSN: 2331-7019
CoNE: https://pure.mpg.de/cone/journals/resource/2331-7019