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  Enhanced thermoelectric performance in Mg3+xSb1.5Bi0.49Te0.01 via engineering microstructure through melt-centrifugation

Ozen, M., Yahyaoglu, M., Candolfi, C., Veremchuk, I., Kaiser, F., Burkhardt, U., et al. (2021). Enhanced thermoelectric performance in Mg3+xSb1.5Bi0.49Te0.01 via engineering microstructure through melt-centrifugation. Journal of Materials Chemistry A, 9(3), 1733-1742. doi:10.1039/D0TA09993G.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0007-B742-0 Version Permalink: http://hdl.handle.net/21.11116/0000-0007-DF69-9
Genre: Journal Article

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 Creators:
Ozen, Melis1, Author
Yahyaoglu, Mujde1, Author
Candolfi, Christophe1, Author
Veremchuk, Igor1, Author
Kaiser, Felix2, Author              
Burkhardt, Ulrich3, Author              
Snyder, G. Jeffrey1, Author
Grin, Yuri4, Author              
Aydemir, Umut1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863405              
3Ulrich Burkhardt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863422              
4Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              

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 Abstract: N-type Zintl phases with earth-abundant and non-toxic constituent elements have attracted intense research interest thanks to their high thermoelectric efficiencies in the mid-temperature range, exemplified by the recently discovered Mg3Sb2 material. In this study, the liquid phase is expelled from the microstructure of the optimized n-type phase Mg3+xSb1.5Bi0.49Te0.01 by applying a melt-centrifugation technique leading to the formation of lattice dislocations, grain boundary dislocations and increasing porosity. Additional phonon scattering mechanisms were introduced in the microstructure through this manufacturing method, resulting in a significant 50% reduction in the total thermal conductivity from ∼1 W m−1 K−1 to ∼0.5 W m−1 K−1 at 723 K. Combined with high power factors, this reduced heat transport leads to a dimensionless thermoelectric figure of merit, zT, value of ∼1.64 at 723 K, 43% higher than the value obtained in untreated Mg3+xSb1.5Bi0.49Te0.01 (zT ∼ 1.14 at 723 K). This peak zT value yields a predicted device ZT of 0.95, and a promising theoretical thermoelectric efficiency of about 12%. These results further underline the great potential of the lightweight Mg3Sb2 material for mid-temperature energy harvesting via thermoelectric effects.

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Language(s): eng - English
 Dates: 2021-01-282021-01-28
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1039/D0TA09993G
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Title: Journal of Materials Chemistry A
  Abbreviation : J. Mater. Chem. A
Source Genre: Journal
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Publ. Info: Cambridge, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 9 (3) Sequence Number: - Start / End Page: 1733 - 1742 Identifier: ISSN: 2050-7488
CoNE: https://pure.mpg.de/cone/journals/resource/2050-7488