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Schlagwörter:
Boron, cesium, clathrate-I, high-pressure synthesis, silicon
Zusammenfassung:
Cs8B8Si38 is obtained by high-pressure high-temperature synthesis at p=8 GPa and T=1273 K. The new compound (space group Pm (Formula presented.) n; a=10.0312(3) Å) is the third example for a clathrate-I borosilicide after the potassium and rubidium varieties, respectively. The phase slowly deteriorates in air and moisture but is thermally stable up to 1050 K at ambient pressure. [Cs+]8[B–]8[Si0]38 is electronically balanced, diamagnetic, and shows semiconducting behavior. © 2021 The Authors. Zeitschrift für anorganische und allgemeine Chemie published by Wiley-VCH GmbH