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  Fabrication tolerant high-speed SiP ring modulators and optical add-drop multiplexers for WDM applications

Nojic, J., Sharif Azadeh, S., Müller, J., Merget, F., & Witzens, J. (2020). Fabrication tolerant high-speed SiP ring modulators and optical add-drop multiplexers for WDM applications. In Proceedings of SPIE - The International Society for Optical Engineering. doi:10.1117/12.2543324.

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112850A.pdf (Publisher version), 775KB
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2020
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Society of Photo-Optical Instrumentation Engineers (SPIE)

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https://doi.org/10.1117/12.2543324 (Publisher version)
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 Creators:
Nojic, Jovana1, Author
Sharif Azadeh, Saeed2, Author              
Müller, Juliana1, Author
Merget, Florian1, Author
Witzens, Jeremy1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287471              

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 Abstract: Silicon ring resonator modulators (RRMs) have great potential to reduce footprint and power consumption and to increase modulation speeds in wavelength division multiplexed (WDM) transmitters. However, the optical properties of RRMs are highly sensitive to fabrication variations, which makes them challenging to design for volume production or a large number of WDM-channels. In this work, we present an RRM design that was specifically designed and experimentally validated to have reduced sensitivity to fabrication variations. This includes a sensitivity analysis of resist over- and under-exposure (±30 nm lateral dimension deviation) and of etch depth variability (±10 nm depth variation) within the coupling section. For our design, the deviation from the targeted coupling strength is improved twofold. The proposed devices are fabricated on SOI wafers using a standard CMOS-compatible process. We demonstrate RRMs with an extinction ratio above 5 dB, an OMA better that -7 dB (at 2 Vpp) and a 29 GHz electro-optical bandwidth, showing open eye diagrams at 32 Gb/s limited only by our measurement setup. The measured coupling coefficients are in good agreement with the simulated values. Furthermore, we applied the same design modifications to realize low-doped RRMs as well as ring based adddrop-multiplexers (OADMs). The agreement between the simulated and the measured coupling coefficients (that we identified as the main source of device performance variability) further confirms the effectiveness of our design modifications. These results suggest that the proposed design can be exploited to enable reliable fabrication of resonantbased devices on a large scale, especially in WDM systems.

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Language(s): eng - English
 Dates: 2020-02-26
 Publication Status: Published online
 Pages: 11
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 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1117/12.2543324
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Title: Silicon Photonics XV 2020
Place of Event: San Francisco, California United States
Start-/End Date: 2020-02-03 - 2020-02-06

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Title: Proceedings of SPIE - The International Society for Optical Engineering
Source Genre: Proceedings
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Pages: - Volume / Issue: 11285 Sequence Number: 112850A Start / End Page: - Identifier: -