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要旨:
Silicon ring resonator modulators (RRMs) have great potential to reduce footprint and power consumption and to increase modulation speeds in wavelength division multiplexed (WDM) transmitters. However, the optical properties of RRMs are highly sensitive to fabrication variations, which makes them challenging to design for volume production or a large number of WDM-channels. In this work, we present an RRM design that was specifically designed and experimentally validated to have reduced sensitivity to fabrication variations. This includes a sensitivity analysis of resist over- and under-exposure (±30 nm lateral dimension deviation) and of etch depth variability (±10 nm depth variation) within the coupling section. For our design, the deviation from the targeted coupling strength is improved twofold. The proposed devices are fabricated on SOI wafers using a standard CMOS-compatible process. We demonstrate RRMs with an extinction ratio above 5 dB, an OMA better that -7 dB (at 2 V$pp) and a 29 GHz electro-optical bandwidth, showing open eye diagrams at 32 Gb/s limited only by our measurement setup. The measured coupling coefficients are in good agreement with the simulated values. Furthermore, we applied the same design modifications to realize low-doped RRMs as well as ring based adddrop-multiplexers (OADMs). The agreement between the simulated and the measured coupling coefficients (that we identified as the main source of device performance variability) further confirms the effectiveness of our design modifications. These results suggest that the proposed design can be exploited to enable reliable fabrication of resonantbased devices on a large scale, especially in WDM systems.
