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  Power-efficient lumped-element meandered silicon Mach-Zehnder modulators

Sharif Azadeh, S., Noij, J., Moscoso-Mártir, A., Merget, F., & Witzens, J. (2020). Power-efficient lumped-element meandered silicon Mach-Zehnder modulators. In Proceedings of SPIE - The International Society for Optical Engineering. doi:10.1117/12.2544735.

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112850C.pdf (Publisher version), 1019KB
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2020
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Society of Photo-Optical Instrumentation Engineers (SPIE)

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https://doi.org/10.1117/12.2544735 (Publisher version)
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 Creators:
Sharif Azadeh, Saeed1, Author              
Noij, Jovana2, Author
Moscoso-Mártir , Alvir2, Author
Merget, Florian2, Author
Witzens, Jeremy2, Author
Affiliations:
1Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287471              
2External Organizations, ou_persistent22              

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 Abstract: Driving electro-optic modulators in lumped-element (LE) configuration allows for small footprint, reduced power consumption, and improved high-speed performance. The main shortcoming of conventional rectilinear LE modulators are the required high drive-voltages, resulting from their shortened phase-shifters. To address this, we introduce a Mach-Zehnder modulator with meandered phase shifters (M-MZM), which can be driven in LE configuration, while keeping the optical phase shifter length in the same order as traveling-wave modulators (TW-MZMs). A design limitation that needs to be taken into account consists in the optical transit time of the device, that limits the overall electro-optic bandwidth. First, we review the overall power consumption improvement as well as the bandwidth enhancement in LE modulators compared to TW-MZMs, also taking the driver output impedance and parasitics from wire- or bump-bonds into account. Then, we report on the design, implementation, and experimental characterization of carrier-depletion based M-MZMs fabricated on silicon-on-insulator (SOI) wafers using standard CMOS-compatible processes. The fabricated M-MZMs, provided with low (W1), moderately (W2) and highly (W3) doped junctions, require 9.2 Vpp, 5.5 Vpp, and 3.7 Vpp for full extinction, with optical insertion losses of 5 dB, 6.3 dB and 9.1 dB. For all three M-MZMs, open eye diagrams are recorded at 25 Gb/s using a 50Ω driver and termination. For unterminated M-MZMs, higher data rates could be achieved, provided that a low output impedance driver be wire- or bump-bonded to the modulators. Finally, we compare the power consumption of the M-MZMs with TW-MZMs and show that the M-MZMs feature a 4X reduced power consumption at 25 Gb/s.

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Language(s): eng - English
 Dates: 2020-02-26
 Publication Status: Published online
 Pages: 11
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 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1117/12.2544735
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Title: Silicon Photonics XV 2020
Place of Event: San Francisco, California United States
Start-/End Date: 2020-02-03 - 2020-02-06

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Title: Proceedings of SPIE - The International Society for Optical Engineering
Source Genre: Proceedings
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Pages: - Volume / Issue: 11285 Sequence Number: 112850C Start / End Page: - Identifier: -