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  Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers

Thiessen, T., Menezo, S., Jany, C., Mak, J. C. C., & Poon, J. (2020). Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers. Optics Express, 28(26), 38579-38591. doi:10.1364/OE.412839.

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oe-28-26-38579.pdf (Publisher version), 5MB
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oe-28-26-38579.pdf
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Copyright Date:
2020
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OSA

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https://doi.org/10.1364/OE.412839 (Publisher version)
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OA-Status:
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 Creators:
Thiessen, Torrey1, Author
Menezo, Sylvie1, Author
Jany, Christophe1, Author
Mak, Jason C. C.1, Author
Poon, Joyce2, Author           
Affiliations:
1External Organizations, ou_persistent22              
2Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287471              

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 Abstract: We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB.

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Language(s): eng - English
 Dates: 2020-12-072020-12
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1364/OE.412839
 Degree: -

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Title: Optics Express
  Abbreviation : Opt. Express
Source Genre: Journal
 Creator(s):
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Publ. Info: Washington, DC : Optical Society of America
Pages: - Volume / Issue: 28 (26) Sequence Number: - Start / End Page: 38579 - 38591 Identifier: ISSN: 1094-4087
CoNE: https://pure.mpg.de/cone/journals/resource/954925609918