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  Low-Temperature Growth of Graphene on a Semiconductor

Røst, H. I., Chellappan, R. K., Strand, F. S., Grubišić-Čabo, A., Reed, B. P., Prieto, M., et al. (2021). Low-Temperature Growth of Graphene on a Semiconductor. The Journal of Physical Chemistry C, 125(7), 4243-4252. doi:10.1021/acs.jpcc.0c10870.

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 Creators:
Røst, Håkon I.1, Author
Chellappan, Rajesh Kumar1, Author
Strand, Frode S.1, Author
Grubišić-Čabo, Antonija2, Author
Reed, Benjamin P.3, Author
Prieto, Mauricio4, Author              
Tanase, Liviu Cristian4, Author              
Caldas, Lucas de Souza4, Author              
Wongpinij, Thipusa5, Author
Euaruksakul, Chanan5, Author
Schmidt, Thomas4, Author              
Tadich, Anton6, Author
Cowie, Bruce C. C.6, Author
Li, Zheshen7, Author
Cooil, Simon P.3, Author
Wells, Justin W.1, 8, Author
Affiliations:
1Center for Quantum Spintronics, Departmentof Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway, ou_persistent22              
2School of Physics & Astronomy, Monash University, Clayton, Victoria 3168, Australia, ou_persistent22              
3Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom, ou_persistent22              
4Interface Science, Fritz Haber Institute, Max Planck Society, ou_2461712              
5Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand, ou_persistent22              
6Australian Synchrotron, Clayton, Victoria 3168, Australia, ou_persistent22              
7Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark, ou_persistent22              
8Semiconductor Physics, Department of Physics, University of Oslo (UiO), NO-0371 Oslo, Norway, ou_persistent22              

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 Abstract: The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition-metal-treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around 450–500 °C. From the chemical reaction between SiC and thin films of Fe or Ru, sp3 carbon is liberated from the SiC crystal and converted to sp2 carbon at the surface. The quality of the graphene is demonstrated by using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate are verified by using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene-based device structures.

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Language(s): eng - English
 Dates: 2021-01-272020-12-042020-02-092021-02-25
 Publication Status: Published in print
 Pages: 10
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1021/acs.jpcc.0c10870
 Degree: -

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Title: The Journal of Physical Chemistry C
  Abbreviation : J. Phys. Chem. C
Source Genre: Journal
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Publ. Info: Washington, D.C. : American Chemical Society
Pages: 10 Volume / Issue: 125 (7) Sequence Number: - Start / End Page: 4243 - 4252 Identifier: ISSN: 1932-7447
CoNE: https://pure.mpg.de/cone/journals/resource/954926947766