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  Increased efficiency of current-induced motion of chiral domain walls by interface engineering

Guan, Y., Zhou, X., Ma, T., Bläsing, R., Deniz, H., Yang, S.-H., et al. (2021). Increased efficiency of current-induced motion of chiral domain walls by interface engineering. Advanced Materials, 33(10): 2007991. doi:10.1002/adma.202007991.

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https://doi.org/10.1002/adma.202007991 (Publisher version)
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 Creators:
Guan, Yicheng1, Author              
Zhou, Xilin1, Author
Ma, Tianping1, Author              
Bläsing, Robin1, Author
Deniz, Hakan1, Author              
Yang, See-Hun1, Author              
Parkin, Stuart S. P.1, Author              
Affiliations:
1Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

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 Abstract: Magnetic racetrack devices are promising candidates for next-generation memories. These spintronic shift-register devices are formed from perpendicularly magnetized ferromagnet/heavy metal thin-film systems. Data are encoded in domain wall magnetic bits that have a chiral Neel structure that is stabilized by an interfacial Dzyaloshinskii-Moriya interaction. The bits are manipulated by spin currents generated from electrical currents that are passed through the heavy metal layers. Increased efficiency of the current-induced domain wall motion is a prerequisite for commercially viable racetrack devices. Here, significantly increased efficiency with substantially lower threshold current densities and enhanced domain wall velocities is demonstrated by the introduction of atomically thin 4d and 5d metal "dusting" layers at the interface between the lower magnetic layer of the racetrack (here cobalt) and platinum. The greatest efficiency is found for dusting layers of palladium and rhodium, just one monolayer thick, for which the domain wall's velocity is increased by up to a factor of 3.5. Remarkably, when the heavy metal layer is formed from the dusting layer material alone, the efficiency is rather reduced by an order of magnitude. The results point to the critical role of interface engineering for the development of efficient racetrack memory devices.

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 Dates: 2021-02-042021-03-11
 Publication Status: Published in print
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 Rev. Type: Peer
 Identifiers: ISI: 000614697400001
DOI: 10.1002/adma.202007991
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Project name : ASPIN
Grant ID : 766566
Funding program : Horizon 2020 (H2020)
Funding organization : European Commission (EC)
Project name : Spin Orbitronics for Electronic Technologies (SORBET)
Grant ID : 670166
Funding program : Horizon 2020 (H2020)
Funding organization : European Commission (EC)

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Title: Advanced Materials
  Other : Adv. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: 33 (10) Sequence Number: 2007991 Start / End Page: - Identifier: ISSN: 0935-9648
CoNE: https://pure.mpg.de/cone/journals/resource/954925570855