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  Highly luminescent near-infrared Cu-doped InP quantum dots with a Zn–Cu–In–S/ZnS double shell scheme

Kim, J., Choi, H. S., Wedel, A., Yoon, S.-Y., Jo, J.-H., Kim, H.-M., et al. (2021). Highly luminescent near-infrared Cu-doped InP quantum dots with a Zn–Cu–In–S/ZnS double shell scheme. Journal of Materials Chemistry C, 9(12), 4330-4337. doi:10.1039/D0TC05907B.

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 Creators:
Kim, Jiyong, Author
Choi, Hyung Seok, Author
Wedel, Armin, Author
Yoon, Suk-Young, Author
Jo, Jung-Ho, Author
Kim, Hyun-Min, Author
Han, Chul-Jong, Author
Song, Hong-Joo, Author
Yi, Jeong-Min, Author
Jang, Jong-Shik, Author
Zschiesche, Hannes1, Author              
Lee, Bum-Joo, Author
Park, Kyoungwon, Author
Yang, Heesun, Author
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1Nadezda V. Tarakina, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_2522693              

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 Abstract: Upon Cu doping into host semiconductor quantum dots (QDs), intra-gap states inside the band gap are generated, by which energy down-shifted photoluminescence (PL) with broad emissivity and large Stokes shift emerges. Technologically important, environmentally friendly InP QDs typically used as green and red emitters in display devices can achieve exceptional PL quantum yields (QYs) of near-unity (95–100) when the-state-of-the-art core/shell heterostructure of the ZnSe inner/ZnS outer shell is elaborately applied. Meanwhile, the PL QYs of red-to-near-infrared (IR)-emitting Cu-doped InP (InP:Cu) QDs reported to date are still modest (40–58). Herein, we explore the synthesis of strain-engineered highly emissive InP:Cu/Zn–Cu–In–S (ZCIS)/ZnS core/shell/shell QDs via a one-pot approach. When this unconventional combination of a ZCIS/ZnS double shelling scheme is introduced to a series of InP:Cu cores with different sizes, the resulting InP:Cu/ZCIS/ZnS QDs with a tunable near-IR PL range of 694–850 nm yield the highest-ever PL QYs of 71.5–82.4. These outcomes strongly point to the efficacy of the ZCIS interlayer, which makes the core/shell interfacial strain effectively alleviated, toward high emissivity. The presence of such an intermediate ZCIS layer is further examined by comparative size, structural, and compositional analyses.

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Language(s): eng - English
 Dates: 2021-02-262021
 Publication Status: Published in print
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 Identifiers: DOI: 10.1039/D0TC05907B
BibTex Citekey: D0TC05907B
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Title: Journal of Materials Chemistry C
  Other : Journal of Materials Chemistry C: Materials for Optical and Electronic Devices
  Abbreviation : J. Mater. Chem. C
Source Genre: Journal
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Publ. Info: London, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 9 (12) Sequence Number: - Start / End Page: 4330 - 4337 Identifier: ISSN: 2050-7526