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  Realization of epitaxial NbP and TaP Weyl semimetal thin films

Bedoya-Pinto, A., Pandeya, A. K., Liu, D., Deniz, H., Chang, K., Tan, H., et al. (2020). Realization of epitaxial NbP and TaP Weyl semimetal thin films. ACS Nano, 14(4), 4405-4413. doi:10.1021/acsnano.9b09997.

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2020
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American Chemical Society

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https://doi.org/10.1021/acsnano.9b09997 (Publisher version)
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Bedoya-Pinto, Amilcar1, Author              
Pandeya, Avanindra Kumar1, Author              
Liu, Defa1, Author              
Deniz, Hakan1, Author              
Chang, Kai1, Author
Tan, Hengxin1, Author
Han, Hyeon1, Author              
Jena, Jagannath1, Author              
Kostanovskiy, Ilya1, Author              
Parkin, Stuart S. P.1, Author              
Affiliations:
1Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

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 Abstract: Weyl semimetals (WSMs) exhibit an electronic structure governed by linear band dispersions and degenerate (Weyl) points that lead to exotic physical phenomena. While WSMs were established in bulk monopnictide compounds several years ago, the growth of thin films remains a challenge. Here, we report the bottom-up synthesis of single-crystalline NbP and TaP thin films, 9 to 70 nm thick, by means of molecular beam epitaxy. The as-grown epitaxial films feature a phosphorus-rich stoichiometry, a tensile-strained unit cell, and a homogeneous surface termination, unlike their bulk crystal counterparts. These properties result in an electronic structure governed by topological surface states as directly observed using in situ momentum photoemission microscopy, along with a Fermi-level shift of -0.2 eV with respect to the intrinsic chemical potential. Although the Fermi energy of the as-grown samples is still far from the Weyl points, carrier mobilities close to 103 cm2/(V s) have been measured at room temperature in patterned Hall-bar devices. The ability to grow thin films of Weyl semimetals that can be tailored by doping or strain, is an important step toward the fabrication of functional WSM-based devices and heterostructures.

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 Dates: 2020-02-132020
 Publication Status: Published in print
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 Identifiers: BibTex Citekey: P13892
DOI: 10.1021/acsnano.9b09997
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Title: ACS Nano
  Other : ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 14 (4) Sequence Number: - Start / End Page: 4405 - 4413 Identifier: ISSN: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851