English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
 
 
DownloadE-Mail
  Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors

Aull, T., Şaşıoğlu, E., Maznichenko, I. V., Ostanin, S., Ernst, A., Mertig, I., et al. (2019). Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors. Physical Review Materials, 3(12): 124415. doi:10.1103/PhysRevMaterials.3.124415.

Item is

Files

show Files
hide Files
:
PhysRevMaterials.3.124415.pdf (Publisher version), 692KB
 
File Permalink:
-
Name:
PhysRevMaterials.3.124415.pdf
Description:
Archivkopie
OA-Status:
Visibility:
Private
MIME-Type / Checksum:
application/pdf
Technical Metadata:
Copyright Date:
-
Copyright Info:
-
License:
-

Locators

show
hide
Description:
-
OA-Status:

Creators

show
hide
 Creators:
Aull, T.1, Author
Şaşıoğlu, E.1, Author
Maznichenko, I. V.1, Author
Ostanin, S.1, Author
Ernst, A.2, Author           
Mertig, I.2, Author
Galanakis, I.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Max Planck Institute of Microstructure Physics, Max Planck Society, ou_2415691              

Content

show
hide
Free keywords: -
 Abstract: Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and identify suitable candidates for these spintronic devices combining the desirable properties: (i) HMMs with sizable energy gap or SGSs with spin gaps both below and above the Fermi level, (ii) high Curie temperature, (iii) convex hull energy distance less than 0.20 eV, and (iv) negative formation energies. Our results pave the way for the experimental realization of the proposed magnetic tunnel diodes and transistors.

Details

show
hide
Language(s):
 Dates: 2019-12-302019-12
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: BibTex Citekey: P13880
DOI: 10.1103/PhysRevMaterials.3.124415
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mat.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: College Park, MD : American Physical Society
Pages: - Volume / Issue: 3 (12) Sequence Number: 124415 Start / End Page: - Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953