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  Enhanced spontaneous polarization in ultrathin SnTe films with layered antipolar structure

Chang, K., Kaloni, T., Lin, H., Bedoya-Pinto, A., Pandeya, A. K., Kostanovskiy, I., et al. (2019). Enhanced spontaneous polarization in ultrathin SnTe films with layered antipolar structure. Advanced Materials Technologies, 31(3): 1804428. doi:10.1002/adma.201804428.

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Chang, Kai1, Author
Kaloni, Thaneshwor2, Author
Lin, Haicheng2, Author
Bedoya-Pinto, Amilcar1, Author                 
Pandeya, Avanindra K.1, Author           
Kostanovskiy, Ilya1, Author           
Zhao, Kun2, Author
Zhong, Yong2, Author
Hu, Xiaopeng2, Author
Xue, Qi-Kun2, Author
Chen, Xi2, Author
Ji, Shuai-Hua2, Author
Barraza-Lopez, Salvador2, Author
Parkin, Stuart S. P.1, Author                 
Affiliations:
1Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              
2External Organizations, ou_persistent22              

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 Abstract: 2D SnTe films with a thickness of as little as 2 atomic layers (ALs) have recently been shown to be ferroelectric with in-plane polarization. Remarkably, they exhibit transition temperatures (Tc ) much higher than that of bulk SnTe. Here, combining molecular beam epitaxy, variable temperature scanning tunneling microscopy, and ab initio calculations, the underlying mechanism of the Tc enhancement is unveiled, which relies on the formation of γ-SnTe, a van der Waals orthorhombic phase with antipolar inter-layer coupling in few-AL thick SnTe films. In this phase, 4n - 2 AL (n = 1, 2, 3…) thick films are found to possess finite in-plane polarization (space group Pmn21), while 4n AL thick films have zero total polarization (space group Pnma). Above 8 AL, the γ-SnTe phase becomes metastable, and can convert irreversibly to the bulk rock salt phase as the temperature is increased. This finding unambiguously bridges experiments on ultrathin SnTe films with predictions of robust ferroelectricity in GeS-type monochalcogenide monolayers. The observed high transition temperature, together with the strong spin-orbit coupling and van der Waals structure, underlines the potential of atomically thin γ-SnTe films for the development of novel spontaneous polarization-based devices.

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 Dates: 2018-11-022019-01-18
 Publication Status: Published in print
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 Identifiers: BibTex Citekey: P13780
DOI: 10.1002/adma.201804428
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Grant ID : 1812/2-1
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Funding organization : Deutsche Forschungsgemeinschaft
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Grant ID : 51561145005
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Funding organization : National Natural Science Foundation of China
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Grant ID : 2016YFA030100
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Funding organization : Ministry of Science and Technology of China
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Grant ID : DE-SC0016139
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Funding organization : U.S. Department of Energy

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Title: Advanced Materials Technologies
Source Genre: Journal
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Publ. Info: Weinheim : Wiley
Pages: - Volume / Issue: 31 (3) Sequence Number: 1804428 Start / End Page: - Identifier: ISSN: 2365-709X
CoNE: https://pure.mpg.de/cone/journals/resource/2365-709X