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  From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films

Kaloni, T., Chang, K., Miller, B. J., Xue, Q.-K., Chen, X., Ji, S.-H., et al. (2019). From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films. Physical Review B, 99(13): 134108. doi:10.1103/PhysRevB.99.134108.

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 Urheber:
Kaloni, Thaneshwor1, Autor
Chang, Kai2, Autor
Miller, Brandon J.1, Autor
Xue, Qi-Kun1, Autor
Chen, Xi1, Autor
Ji, Shuai-Hua1, Autor
Parkin, Stuart S. P.2, Autor                 
Barraza-Lopez, Salvador1, Autor
Affiliations:
1External Organizations, ou_persistent22              
2Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

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 Zusammenfassung: SnTe hosts ferroelectricity that competes with its weak nontrivial band topology: in the high-symmetry rocksalt structure - in which its intrinsic electric dipole is quenched - this material develops metallic surface bands, but in its rhombic ground-state configuration - which hosts a nonzero spontaneous electric dipole - the crystalline symmetry is lowered, and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 atomic layers (ALs) are examined on freestanding samples, to which atomic layers were gradually added. Four-AL SnTe films are antiferroelectrically coupled, while thicker freestanding SnTe films are ferroelectrically coupled. The electronic band gap reduces its magnitude in going from 2 to 40 ALs, but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.

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 Datum: 2019-04-232019-04-01
 Publikationsstatus: Erschienen
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 Identifikatoren: BibTex Citekey: P13737
DOI: 10.1103/PhysRevB.99.134108
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Titel: Physical Review B
  Kurztitel : Phys. Rev. B
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Woodbury, NY : American Physical Society
Seiten: - Band / Heft: 99 (13) Artikelnummer: 134108 Start- / Endseite: - Identifikator: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008