English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
 
 
DownloadE-Mail
  From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films

Kaloni, T., Chang, K., Miller, B. J., Xue, Q.-K., Chen, X., Ji, S.-H., et al. (2019). From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films. Physical Review B, 99(13): 134108. doi:10.1103/PhysRevB.99.134108.

Item is

Files

show Files
hide Files
:
PhysRevB.99.134108.pdf (Publisher version), 5MB
 
File Permalink:
-
Name:
PhysRevB.99.134108.pdf
Description:
Archivkopie
OA-Status:
Visibility:
Private
MIME-Type / Checksum:
application/pdf
Technical Metadata:
Copyright Date:
-
Copyright Info:
-
License:
-

Locators

show
hide
Locator:
https://doi.org/10.1103/PhysRevB.99.134108 (Publisher version)
Description:
-
OA-Status:

Creators

show
hide
 Creators:
Kaloni, Thaneshwor1, Author
Chang, Kai2, Author
Miller, Brandon J.1, Author
Xue, Qi-Kun1, Author
Chen, Xi1, Author
Ji, Shuai-Hua1, Author
Parkin, Stuart S. P.2, Author                 
Barraza-Lopez, Salvador1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

Content

show
hide
Free keywords: -
 Abstract: SnTe hosts ferroelectricity that competes with its weak nontrivial band topology: in the high-symmetry rocksalt structure - in which its intrinsic electric dipole is quenched - this material develops metallic surface bands, but in its rhombic ground-state configuration - which hosts a nonzero spontaneous electric dipole - the crystalline symmetry is lowered, and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 atomic layers (ALs) are examined on freestanding samples, to which atomic layers were gradually added. Four-AL SnTe films are antiferroelectrically coupled, while thicker freestanding SnTe films are ferroelectrically coupled. The electronic band gap reduces its magnitude in going from 2 to 40 ALs, but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.

Details

show
hide
Language(s):
 Dates: 2019-04-232019-04-01
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: BibTex Citekey: P13737
DOI: 10.1103/PhysRevB.99.134108
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 99 (13) Sequence Number: 134108 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008