English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
 Local TagsRelease HistoryDetailsSummary
  Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting

Mamun, M. A., Tapily, K., Moutanabbir, O., Baumgart, H., & Elmustafa, A. A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184. doi:10.1149/2.0131804jss.

Item is

 

show all

Basic

hide
Item Permalink: https://hdl.handle.net/21.11116/0000-0009-2B40-F Version Permalink: https://hdl.handle.net/21.11116/0000-0009-4EE7-C
Genre: Journal Article

Files

hide Files
:
Mamun_2018_ECS_J._Solid_State_Sci._Technol._7_P180.pdf (Publisher version), 862KB
 
File Permalink:
-
Name:
Mamun_2018_ECS_J._Solid_State_Sci._Technol._7_P180.pdf
Description:
Archivkopie
OA-Status:
Visibility:
Private
MIME-Type / Checksum:
application/pdf
Technical Metadata:
Copyright Date:
-
Copyright Info:
-
License:
-

Locators

hide
Locator:
https://doi.org/10.1149/2.0131804jss (Publisher version)
Description:
-
OA-Status:

Creators

hide
 Creators:
Mamun, M. A.1, Author
Tapily, K.1, Author
Moutanabbir, O.2, Author
Baumgart, H.1, Author
Elmustafa, A. A.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, Weinberg 2, 06120 Halle, DE, ou_3287476              

Content

hide
Free keywords: -
 Abstract: The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy to enable high-efficiency and low-cost optoelectronic devices. Ion-cut using sub-surface defect engineering has been an effective process to split and transfer a variety of semiconductors. With this perspective, hydrogen-implanted AlN samples were annealed in air at temperatures ranging from 300°C to 600°C for 5 min to study the influence of pre-layer splitting treatments on the nanomechanical properties. There is a clear dependence of the hardness on implanted hydrogen implantation fluence. We observe that the as-implanted hardness increased from 18 GPa for the virgin reference sample to ∼25 GPa for the highest fluence of 3 × 1017 H cm-2 prior to annealing. In the case of reference single crystalline Si samples, a significant drop in the hardness and elastic modulus is observed in the H implantation-induced damage zone subsequent to thermal annealing , while for crystalline epitaxial AlN samples with 0.5 × 1017 and 2.0 × 1017 H implant fluences, the hardness increases and peaks until the thermal annealing temperature reaches 350°C and subsequently begins to drop thereafter for higher annealing temperatures. However, for the 1.0 × 1017 H implantation fluence the hardness continues to increase with increasing thermal annealing temperature.

Details

hide
Language(s):
 Dates: 2018-04-04
 Publication Status: Published online
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: BibTex Citekey: P13720
DOI: 10.1149/2.0131804jss
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

hide
Title: ECS Journal of Solid State Science and Technology
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Pennington, NJ : ECS
Pages: - Volume / Issue: 7 (4) Sequence Number: - Start / End Page: P180 - P184 Identifier: ISSN: 2162-8769
ISSN: 2162-8777
CoNE: https://pure.mpg.de/cone/journals/resource/2162-8769