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  Tunable RF phase shifters based on vanadium dioxide metal insulator transition

Casu, E. A., Oliva, N., Cavalieri, M., Müller, A. A., Fumarola, A., Vitale, W. A., et al. (2018). Tunable RF phase shifters based on vanadium dioxide metal insulator transition. IEEE journal of the Electron Devices Society, 6(1), 965-971. doi:10.1109/JEDS.2018.2837869.

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Tunable_RF_Phase_Shifters_Based_on_Vanadium_Dioxide_Metal_Insulator_Transition.pdf (Publisher version), 3MB
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Tunable_RF_Phase_Shifters_Based_on_Vanadium_Dioxide_Metal_Insulator_Transition.pdf
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https://doi.org/10.1109/JEDS.2018.2837869 (Publisher version)
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Casu, Emanuele A1, Author
Oliva, Nicolo1, Author
Cavalieri, Matteo1, Author
Müller, Andrei A1, Author
Fumarola, Alessandro2, Author           
Vitale, Wolfgang A1, Author
Krammer, Anna1, Author
Schueler, Andreas1, Author
Fernández-Bolanos, Montserrat1, Author
Ionescu, Adrian M.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

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 Abstract: This paper presents the design, fabrication, and electrical characterization of a reconfigurable RF capacitive shunt switch that exploits the electro-thermally triggered vanadium dioxide (VO2) insulator to metal phase transition. The RF switch is further exploited to build wide-band RF true-time delay tunable phase shifters. By triggering the VO2 switch insulator to metal transition (IMT), the total capacitance can be reconfigured from the series of two metal-insulator-metal (MIM) capacitors to a single MIM capacitor. The effect of bias voltage on losses and phase shift is investigated, explained, and compared to the state of the art in the field. We report thermal actuation of the devices by heating the devices above VO2 IMT temperature. By cascading multiple stages a maximum of 40° per dB loss close to 7 GHz were obtained.

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 Dates: 2018-05-29
 Publication Status: Published online
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 Identifiers: BibTex Citekey: P13713
DOI: 10.1109/JEDS.2018.2837869
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Title: IEEE journal of the Electron Devices Society
  Other : IEEE journal of the Electron Devices Society : J-EDS
Source Genre: Journal
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Publ. Info: New York, NY : IEEE
Pages: - Volume / Issue: 6 (1) Sequence Number: - Start / End Page: 965 - 971 Identifier: ISSN: 2168-6734
CoNE: https://pure.mpg.de/cone/journals/resource/2168-6734