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  Bidirectional non-filamentary RRAM as an analog neuromorphic synapse, part I: Al/Mo/Pr0.7Ca0.3MnO3 material improvements and device measurements

Moon, K., Fumarola, A., Sidler, S., Jang, J., Narayanan, P., Shelby, R. M., et al. (2017). Bidirectional non-filamentary RRAM as an analog neuromorphic synapse, part I: Al/Mo/Pr0.7Ca0.3MnO3 material improvements and device measurements. IEEE journal of the Electron Devices Society, 6, 146-155. doi:10.1109/JEDS.2017.2780275.

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Bidirectional_Non-Filamentary_RRAM_as_an_Analog_Neuromorphic_Synapse_Part_I_Al_Mo_Pr0.7Ca0.3MnO3_Material_Improvements_and_Device_Measurements.pdf (Publisher version), 5MB
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Bidirectional_Non-Filamentary_RRAM_as_an_Analog_Neuromorphic_Synapse_Part_I_Al_Mo_Pr0.7Ca0.3MnO3_Material_Improvements_and_Device_Measurements.pdf
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2017
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https://doi.org/10.1109/JEDS.2017.2780275 (Publisher version)
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 Creators:
Moon, Kibong1, Author
Fumarola, Alessandro2, Author           
Sidler, Severin1, Author
Jang, Jungwoo1, Author
Narayanan, Pritish1, Author
Shelby, Robert M.1, Author
Burr, Geoffrey W.1, Author
Hwang, Hyunsang1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              

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 Abstract: We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as bidirectional analog synapses for on-chip acceleration of the backpropagation algorithm. Previous Al/PCMO devices exhibited degraded LRS retention due to the low activation energy for oxidation of the Al electrode, and Mo/PCMO devices showed low conductance contrast. To control the redox reaction at the metal/PCMO interface, we introduce a 4-nm interfacial layer of conducting MoOx as an oxygen buffer layer. Due to the controlled redox reaction within this Al/Mo/PCMO device, we observed improvements in both retention and conductance on/off ratio. We confirm bidirectional analog synapse characteristics and measure “jump-tables” suitable for large scale neural network simulations that attempt to capture complex and stochastic device behavior [see companion paper]. Finally, switching energy measurements are shown, illustrating a path for future device research toward smaller devices, shorter pulses and lower programming voltages.

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 Dates: 2017-12-06
 Publication Status: Published online
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 Identifiers: BibTex Citekey: P13650
DOI: 10.1109/JEDS.2017.2780275
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Title: IEEE journal of the Electron Devices Society
  Other : IEEE journal of the Electron Devices Society : J-EDS
Source Genre: Journal
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Publ. Info: New York, NY : IEEE
Pages: - Volume / Issue: 6 Sequence Number: - Start / End Page: 146 - 155 Identifier: ISSN: 2168-6734
CoNE: https://pure.mpg.de/cone/journals/resource/2168-6734