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  Large tunneling anisotropic magnetoresistance mediated by surface states

Hervé, M., Balashov, T., Ernst, A., & Wulfhekel, W. (2018). Large tunneling anisotropic magnetoresistance mediated by surface states. Physical Review B, 97(22): 220406(R). doi:10.1103/PhysRevB.97.220406.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0009-28D9-6 Version Permalink: https://hdl.handle.net/21.11116/0000-0009-4EF3-E
Genre: Journal Article

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PhysRevB.97.220406.pdf (Publisher version), 2MB
 
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https://doi.org/10.1103/PhysRevB.97.220406 (Publisher version)
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Hervé, Marie1, Author
Balashov, Timofey1, Author
Ernst, Arthur2, Author           
Wulfhekel, Wulf1, Author
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1External Organizations, ou_persistent22              
2Max Planck Institute of Microstructure Physics, Max Planck Society, ou_2415691              

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 Abstract: We investigate the tunneling anisotropic magnetoresistance (TAMR) in thick hcp Co films at cryogenic temperatures using scanning tunneling microscopy. At around −350mV, a strong TAMR up to 30% is found with a characteristic voltage dependence and a reversal of sign. With the help of ab initio calculations, the TAMR can be traced back to a spin-polarized occupied surface state that experiences a strong spin-orbit interaction leading to a magnetization direction depending on hybridization with bulk states.

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 Dates: 2018-06-272018-06-01
 Publication Status: Issued
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 Identifiers: BibTex Citekey: P13419
DOI: 10.1103/PhysRevB.97.220406
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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 97 (22) Sequence Number: 220406(R) Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008