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  Preparation and characterization of FeSe and Bi nanostructures on Bi2Se3(0001): A scanning tunneling microscopy study

Sevriuk, V., & Sander, D. (2018). Preparation and characterization of FeSe and Bi nanostructures on Bi2Se3(0001): A scanning tunneling microscopy study. In K. Wandelt (Ed.), Encyclopedia of interfacial chemistry: surface science and electrochemistry (pp. 567-572). Elsevier. doi:10.1016/B978-0-12-409547-2.14197-6.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0009-2B58-5 Version Permalink: https://hdl.handle.net/21.11116/0000-0009-4EDD-8
Genre: Book Chapter

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https://doi.org/10.1016/B978-0-12-409547-2.14197-6 (Publisher version)
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 Creators:
Sevriuk, V.1, Author
Sander, D.2, Author           
Affiliations:
1Max Planck Institute of Microstructure Physics, Max Planck Society, Weinberg 2, 06120 Halle, DE, ou_2415691              
2Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287471              

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Free keywords: Bismuth bilayer Bismuth selenide Iron selenide Scanning tunneling microscopy Topological insulator/superconductor heterostructures
 Abstract: Procedures for the preparation of Bi2Se3(0001) surfaces, FeSe atomic layers, and Bi bilayers on Bi2Se3(0001) are presented. Bi2Se3(0001) surfaces are characterized by terraces separated by quintuple layer high steps of 0.95 nm height. Epitaxial FeSe islands with lateral extensions of several hundred nanometers and a few unit cell (nm) thickness are produced by Fe deposition at room temperature and subsequent annealing at 650 K. These islands are under an anisotropic in-plane strain (a=0.377±0.002 nm, b=0.385±0.004 nm) with respect to the bulk FeSe reference state (aFeSE,bulk=0.377 nm). Bi bilayers are formed on Bi2Se3(0001) by atomic hydrogen plasma etching, which removes Se from the Bi2Se3 sample surface. Scanning tunneling microscopy and scanning tunneling spectroscopy are used to characterize the Bi2Se3 substrate and the nanostructures formed on its surface. A differential conductance peak near V identifies a defect-free Bi bilayer on Bi2Se3(0001).

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 Dates: 2018-04-232018
 Publication Status: Issued
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 Rev. Type: -
 Identifiers: BibTex Citekey: P13364
DOI: 10.1016/B978-0-12-409547-2.14197-6
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Title: Encyclopedia of interfacial chemistry : surface science and electrochemistry
Source Genre: Book
 Creator(s):
Wandelt, K., Editor
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Publ. Info: Elsevier
Pages: - Volume / Issue: 3 Sequence Number: - Start / End Page: 567 - 572 Identifier: ISBN: 978-0-12-814987-4