English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
 Local TagsRelease HistoryDetailsSummary
  Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire

Senichev, A., Corfdir, P., Brandt, O., Ramsteiner, M., Breuer, S., Schilling, J., et al. (2018). Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire. Nano Research, 11(9), 4708-4721. doi:10.1007/s12274-018-2053-5.

Item is

 

show all

Basic

hide
Item Permalink: https://hdl.handle.net/21.11116/0000-0009-2B4C-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000F-CBD3-E
Genre: Journal Article

Files

hide Files
:
Senichev2018_Article_ElectronicPropertiesOfWurtzite.pdf (Publisher version), 3MB
View   Save
File Permalink:
https://hdl.handle.net/21.11116/0000-0009-2B4E-1
Name:
Senichev2018_Article_ElectronicPropertiesOfWurtzite.pdf
Description:
-
OA-Status:
Hybrid
Visibility:
Public
MIME-Type / Checksum:
application/pdf / [MD5]
Technical Metadata:
View
Copyright Date:
-
Copyright Info:
-
License:
http://creativecommons.org/licenses/by/4.0/

Locators

hide
Locator:
https://doi.org/10.1007/s12274-018-2053-5 (Publisher version)
Description:
-
OA-Status:
Hybrid

Creators

hide
 Creators:
Senichev, Alexander1, Author
Corfdir, Pierre2, Author
Brandt, Oliver2, Author
Ramsteiner, Manfred2, Author
Breuer, Steffen2, Author
Schilling, Jörg2, Author
Geelhaar, Lutz2, Author
Werner, Peter1, Author
Affiliations:
1Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, Weinberg 2, 06120 Halle, DE, ou_3287476              
2External Organizations, ou_persistent22              

Content

hide
Free keywords: -
 Abstract: III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende and wurtzite structures. So far, this polytypism has impeded the determination of the electronic properties of the metastable wurtzite phase of GaAs, which thus remain highly controversial. In an effort to obtain new insights into this topic, we cross-correlate nanoscale spectral imaging by near-field scanning optical microscopy with a transmission electron microscopy analysis of the very same polytypic GaAs nanowire dispersed onto a Si wafer. Thus, spatially resolved photoluminescence spectra could be unambiguously assigned to nanowire segments whose structure is known with lattice-resolved accuracy. An emission energy of 1.528 eV was observed from extended zincblende segments, revealing that the dispersed nanowire was under uniaxial strain presumably due to interaction with its supporting substrate. These crucial information and the emission energy obtained for extended pure wurtzite segments were used to perform envelope function calculations of zincblende quantum disks in a wurtzite matrix as well as the inverse structure. In these calculations, we varied the fundamental bandgap, the electron mass, and the band offset between zincblende and wurtzite GaAs. From this multi-parameter comparison with the experimental data, we deduced that the bandgap between the Γ8 conduction and A valence band ranges from 1.532 to 1.539 eV in strain-free wurtzite GaAs, and estimated values of 1.507 to 1.514 eV for the Γ7–A bandgap.

Details

hide
Language(s):
 Dates: 2018-04-282018-09
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: BibTex Citekey: P13326
DOI: 10.1007/s12274-018-2053-5
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

hide
Title: Nano Research
  Abbreviation : Nano Res.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Beijing, China : Tsinghua University Press
Pages: - Volume / Issue: 11 (9) Sequence Number: - Start / End Page: 4708 - 4721 Identifier: ISSN: 1998-0124
CoNE: https://pure.mpg.de/cone/journals/resource/1998-0124