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  High performance Al3Sc alloy doped Al3Sc-Sb2Te chalcogenides for phase change memory application

Zhang, S., Wu, L., Song, W., Zhou, X., Song, Z., Shi, J., et al. (2018). High performance Al3Sc alloy doped Al3Sc-Sb2Te chalcogenides for phase change memory application. Journal of Materials Chemistry C, 6, 4177-4182. doi:10.1039/C8TC00590G.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0009-273A-B Version Permalink: https://hdl.handle.net/21.11116/0000-0009-4F1A-3
Genre: Journal Article

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https://doi.org/10.1039/C8TC00590G (Publisher version)
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 Creators:
Zhang, Sifan1, Author
Wu, Liangcai1, Author
Song, Wenxiong1, Author
Zhou, Xilin2, Author
Song, Zhitang1, Author
Shi, Jianjun1, Author
Zhang, Jjing1, Author
Feng, Songlin1, Author
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1External Organizations, ou_persistent22              
2Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, Weinberg 2, 06120 Halle, DE, ou_3287476              

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 Abstract: An Al3Sc alloy doped Al3Sc–Sb2Te chalcogenide was put forward to avoid oxidation of pure Sc and enhance data retention ability. Compared with conventional Ge2Sb2Te5 and Sc-doped Sc0.2Sb2Te3 materials, the Al3Sc alloy doped Al3Sc–Sb2Te chalcogenide has much better thermal stability and data retention. X-ray diffraction and transmission electron microscopy analysis reveal that the structure of Al3Sc–Sb2Te has no obvious change compared with Sb2Te, except for the refined grain size. The Al3Sc–Sb2Te based device shows excellent reversible SET–RESET properties with a suitable operation window and a low power consumption of 1.38 × 10-11 J. In addition, a good cyclability of 1 × 106 cycles can be obtained with a large resistance ratio of about 102. Our calculations reveal that Al and Sc atoms prefer bonding with Te atoms. These stable local patterns stabilize glassy states and result in high stability.

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 Dates: 2018
 Publication Status: Issued
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 Identifiers: BibTex Citekey: P13179
DOI: 10.1039/C8TC00590G
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Title: Journal of Materials Chemistry C
  Other : Journal of Materials Chemistry C: Materials for Optical and Electronic Devices
  Abbreviation : J. Mater. Chem. C
Source Genre: Journal
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Publ. Info: London, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 6 Sequence Number: - Start / End Page: 4177 - 4182 Identifier: ISSN: 2050-7526
CoNE: https://pure.mpg.de/cone/journals/resource/2050-7526