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  Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy

Ding, S. A., Barman, S. R., Horn, K., Yang, H., Yang, B., Brandt, O., et al. (1997). Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy. Applied Physics Letters, 70(18), 2407-2409. doi:10.1063/1.118886.

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1.118886.pdf (Publisher version), 370KB
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1997
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 Creators:
Ding, S. A.1, Author           
Barman, Sudipto Roy1, Author           
Horn, Karsten1, Author           
Yang, H.2, Author
Yang, B.2, Author
Brandt, O.2, Author
Ploog, K.2, Author
Affiliations:
1Fritz Haber Institute, Max Planck Society, ou_24021              
2Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany, ou_persistent22              

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 Abstract: The valence band discontinuity of the n-type cubic GaN/GaAs heterojunction is measured by means of angle-resolved photoemission spectroscopy using synchrotron radiation. High quality cubic GaN films are grown on GaAs(100) substrates by nitrogen plasma-assisted molecular beam epitaxy, and the valence band discontinuity is determined by a combination of core and valence level spectra. A value of ΔEV=(1.84±0.1) eV across the GaN/GaAs heterojunction is obtained, which means that the discontinuity in the conduction bands at this interface is very small, such that a vertical contact scheme may be realized for GaN/GaAs heterojunctions.

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Language(s): eng - English
 Dates: 1996-10-151997-02-281997-05-05
 Publication Status: Published in print
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.118886
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: 3 Volume / Issue: 70 (18) Sequence Number: - Start / End Page: 2407 - 2409 Identifier: ISSN: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223