English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Modulation of surface states in Sb2Te3/Bi2Te3 topological insulator heterostructures: The crucial role of the first adlayers

Pereira, V. M., Wu, C. N., Tjeng, L. H., & Altendorf, S. G. (2021). Modulation of surface states in Sb2Te3/Bi2Te3 topological insulator heterostructures: The crucial role of the first adlayers. Physical Review Materials, 5(3): 034201, pp. 1-7. doi:10.1103/PhysRevMaterials.5.034201.

Item is

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Pereira, V. M.1, Author           
Wu, C. N.1, Author           
Tjeng, L. H.2, Author           
Altendorf, S. G.3, Author           
Affiliations:
1Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
2Liu Hao Tjeng, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863452              
3Simone Altendorf, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863458              

Content

show
hide
Free keywords: Antimony compounds, Bismuth compounds, Chemical potential, Electric insulators, Electronic structure, Modulation, Molecular beam epitaxy, Nanocrystalline materials, Photoelectron spectroscopy, Surface states, Topological insulators, Angle resolved photoelectron spectroscopy, Band structure engineering, Bulk state, Crystalline quality, Dirac point, Energetic position, Gradual changes, Ternary compounds, Tellurium compounds
 Abstract: The hunt for an ideal topological insulator, where the Dirac point is situated in a desirable energetic position and the bulk remains insulating, has motivated experiments on band structure engineering in these materials. To achieve this, Sb2Te3 and Bi2Te3 are commonly combined in ternary compounds or, less frequently, in heterostructures. Here we report on the growth of Sb2Te3/Bi2Te3 heterostructures by means of molecular-beam epitaxy. Using angle-resolved photoelectron spectroscopy, we are able to differentiate between the shift of the chemical potential and the changes in the electronic structure, causing the lift-off of the Dirac point away from the bulk valence band when varying the Sb2Te3 adlayer thickness. Our paper demonstrates that the important modulation of the surface states takes place for the very first Sb2Te3 layers, while thicker adlayers only cause a gradual change of the bulk states and a rigid shift of the chemical potential. Furthermore, we observe the occurrence of diffusion between the Bi2Te3 and Sb2Te3 layers and conclude that a growth at room temperature, followed by annealing, maintains an acceptable crystalline quality while substantially reducing the interdiffusion. © 2021 authors. Published by the American Physical Society.

Details

show
hide
Language(s): eng - English
 Dates: 2021-03-182021-03-18
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1103/PhysRevMaterials.5.034201
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mat.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: College Park, MD : American Physical Society
Pages: - Volume / Issue: 5 (3) Sequence Number: 034201 Start / End Page: 1 - 7 Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953