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  Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface

Setzer, C., Platen, J., Geng, P., Ranke, W., & Jacobi, K. (1997). Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface. Surface Science, 377–379, 125-129. doi:10.1016/S0039-6028(96)01377-5.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0008-B520-7 Version Permalink: https://hdl.handle.net/21.11116/0000-0008-E2F6-3
Genre: Journal Article

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 Creators:
Setzer, Carsten1, Author           
Platen, Jutta1, Author           
Geng, Peter2, Author           
Ranke, Wolfgang2, Author           
Jacobi, Karl1, Author           
Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              
2Fritz Haber Institute, Max Planck Society, ou_24021              

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 Abstract: The GaAs (113)A surface was prepared by molecular beam epitaxy and investigated in situ by means of low-energy electron diffraction, surface core level spectroscopy and angle-resolved valence band photoemission. One stable, (8×1) reconstructed surface was prepared. Surface core level shifts were observed for As 3d (530 meV) and Ga (-460 meV, 360meV) which support a recently proposed model [1]. Two surface resonances were observed at -1.1 and -3.7 eV below the valence band maximum.

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Language(s): eng - English
 Dates: 1996-08-011996-10-151997-04-20
 Publication Status: Issued
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/S0039-6028(96)01377-5
 Degree: -

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Title: Surface Science
  Abbreviation : Surf. Sci.
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier
Pages: 5 Volume / Issue: 377–379 Sequence Number: - Start / End Page: 125 - 129 Identifier: ISSN: 0039-6028
CoNE: https://pure.mpg.de/cone/journals/resource/0039-6028