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  Floquet Engineering of Magnetism in Topological Insulator Thin Films

Liu, X., Fan, B., Hübener, H., de Giovannini, U., Duan, W., Rubio, A., et al. (2023). Floquet Engineering of Magnetism in Topological Insulator Thin Films. Electronic Structure, 5(2): 024002. doi:10.1088/2516-1075/acca58.

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Genre: Zeitschriftenartikel

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Liu_2023_Electron._Struct._5_024002.pdf (Verlagsversion), 3MB
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Liu_2023_Electron._Struct._5_024002.pdf
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Copyright Datum:
2023
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© The Author(s). Published by IOP Publishing Ltd

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externe Referenz:
https://arxiv.org/abs/2106.06977 (Preprint)
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https://doi.org/10.1088/2516-1075/acca58 (Verlagsversion)
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Urheber

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 Urheber:
Liu, X.1, 2, 3, 4, Autor           
Fan, B.1, Autor
Hübener, H.2, 3, Autor           
de Giovannini, U.2, 3, 5, Autor           
Duan, W.1, 6, 7, Autor
Rubio, A.2, 3, 8, 9, Autor           
Tang, P.2, 3, 10, Autor           
Affiliations:
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, ou_persistent22              
2Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
3Center for Free-Electron Laser Science, ou_persistent22              
4Department of Materials Science and Engineering, University of Washington, ou_persistent22              
5Università degli Studi di Palermo, Dipartimento di Fisica e Chimica Emilio Segrè, ou_persistent22              
6Institute for Advanced Study, Tsinghua University, ou_persistent22              
7Collaborative Innovation Center of Quantum Matter, ou_persistent22              
8Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del Paìs Vasco UPV/EHU, ou_persistent22              
9Center for Computational Quantum Physics, Flatiron Institute, ou_persistent22              
10School of Materials Science and Engineering, Beihang University, ou_persistent22              

Inhalt

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Schlagwörter: Floquet theory, quantum quenching, magnetically doped topological insulator thin film
 Zusammenfassung: Dynamic manipulation of magnetism in topological materials is demonstrated here via a Floquet engineering approach using circularly polarized light. Increasing the strength of the laser field, besides the expected topological phase transition (PT), the magnetically doped topological insulator thin film also undergoes a magnetic PT from ferromagnetism to paramagnetism, whose critical behavior strongly depends on the quantum quenching. In sharp contrast to the equilibrium case, the non-equilibrium Curie temperatures vary for different time scale and experimental setup, not all relying on change of topology. Our discoveries deepen the understanding of the relationship between topology and magnetism in the non-equilibrium regime and extend optoelectronic device applications to topological materials.

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Sprache(n): eng - English
 Datum: 2023-02-262022-11-272023-04-042023-04-14
 Publikationsstatus: Online veröffentlicht
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: arXiv: 2106.06977
DOI: 10.1088/2516-1075/acca58
 Art des Abschluß: -

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Projektinformation

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Projektname : X L, B F and W D acknowledge financial supports from the Ministry of Science and Technology of China (Grant No. 2016YFA0301001), the National Natural Science Foundation of China (Grant No. 51788104), and the Beijing Advanced Innovation Center for Future Chip (ICFC). A R, H H, and U D G acknowledge financial supports from the European Research Council (ERC-2015-AdG-694097). The Flatiron Institute is a division of the Simons Foundation. P T was supported by the National Natural Science Foundation of China (Grants No. 12234011) and the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics.
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Titel: Electronic Structure
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: Bristol : IOP Publishing
Seiten: - Band / Heft: 5 (2) Artikelnummer: 024002 Start- / Endseite: - Identifikator: ISSN: 2516-1075
CoNE: https://pure.mpg.de/cone/journals/resource/2516-1075