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  Floquet Engineering of Magnetism in Topological Insulator Thin Films

Liu, X., Tang, P., Hübener, H., de Giovannini, U., Duan, W., & Rubio, A. (2021). Floquet Engineering of Magnetism in Topological Insulator Thin Films.

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2106.06977.pdf (Preprint), 2MB
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https://arxiv.org/abs/2106.06977 (Preprint)
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 Creators:
Liu, X.1, 2, 3, Author              
Tang, P.2, 3, Author              
Hübener, H.2, 3, Author              
de Giovannini, U.2, 3, Author              
Duan, W.1, 4, 5, Author
Rubio, A.2, 3, 6, 7, Author              
Affiliations:
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, ou_persistent22              
2Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
3Center for Free-Electron Laser Science, ou_persistent22              
4Institute for Advanced Study, Tsinghua University, ou_persistent22              
5Collaborative Innovation Center of Quantum Matter, ou_persistent22              
6Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del Paìs Vasco UPV/EHU, ou_persistent22              
7Center for Computational Quantum Physics, Flatiron Institute, ou_persistent22              

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Free keywords: Condensed Matter, Mesoscale and Nanoscale Physics, cond-mat.mes-hall, Condensed Matter, Materials Science, cond-mat.mtrl-sci
 Abstract: Dynamic manipulation of magnetism in topological materials is demonstrated here via a Floquet engineering approach using circularly polarized light. Increasing the strength of the laser field, besides the expected topological phase transition, the magnetically doped topological insulator thin film also undergoes a magnetic phase transition from ferromagnetism to paramagnetism, whose critical behavior strongly depends on the quantum quenching. In sharp contrast to the equilibrium case, the non-equilibrium Curie temperatures vary for different time scale and experimental setup, not all relying on change of topology. Our discoveries deepen the understanding of the relationship between topology and magnetism in the non-equilibrium regime and extend optoelectronic device applications to topological materials.

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Language(s): eng - English
 Dates: 2021-06-13
 Publication Status: Published online
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: No review
 Identifiers: arXiv: 2106.06977
 Degree: -

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