English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improvedresponsivity and specific detectivity at 1,550 nm

Son, B., Zhou, H., Lin, Y., Lee, K. H., & Tan, C. S. (2021). Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improvedresponsivity and specific detectivity at 1,550 nm. Optics Express, 29(11), 16520-16533. doi:10.1364/OE.422931.

Item is

Basic

show hide
Genre: Journal Article

Files

show Files
hide Files
:
oe-29-11-16520.pdf (Publisher version), 6MB
Name:
oe-29-11-16520.pdf
Description:
-
Visibility:
Public
MIME-Type / Checksum:
application/pdf / [MD5]
Technical Metadata:
Copyright Date:
2021
Copyright Info:
Optical Society of America

Locators

show
hide
Locator:
https://doi.org/10.1364/OE.422931 (Publisher version)
Description:
-

Creators

show
hide
 Creators:
Son, Bongkwon1, Author
Zhou, Hao1, Author
Lin, Yiding2, Author              
Lee, Kwang Hong1, Author
Tan, Chuan Seng1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287471              

Content

show
hide
Free keywords: ON-SI PHOTODIODES; GE PHOTODIODES; EFFICIENCY; PHOTODETECTORS; RESPONSIVITY; POWEROptics;
 Abstract: Gourd-shaped hole array germanium (Ge) vertical p-i-n photodiodes were designed and demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of 0.74 A/W and specific detectivity of 3.1 × 1010 cm·Hz1/2/W. It is calculated that the gourd-shaped hole design provides a higher optical absorption compared to a cylinder-shaped hole design. As a result, the external quantum efficiency for the gourd-shaped hole array photodetector was enhanced by ∼2.5× at 1,550 nm, comparing with hole-free array photodetectors. In addition, the extracted specific detectivity is superior to that of commercial bulk Ge photodiodes. The 3-dB bandwidth for the hole array photodetectors is improved by ∼10% due to a lower device capacitance. This work paves the way for low-cost and high-performance CMOS compatible photodetectors for Si-based photonic-integrated circuits.

Details

show
hide
Language(s): eng - English
 Dates: 2021-05-24
 Publication Status: Published in print
 Pages: 14
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000654369300050
DOI: 10.1364/OE.422931
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Optics Express
  Abbreviation : Opt. Express
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Washington, DC : Optical Society of America
Pages: - Volume / Issue: 29 (11) Sequence Number: - Start / End Page: 16520 - 16533 Identifier: ISSN: 1094-4087
CoNE: https://pure.mpg.de/cone/journals/resource/954925609918