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  Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects

Chassé, T., Neuhold, G., Paggel, J., & Horn, K. (1997). Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science, 115(4), 326-335. doi:10.1016/S0169-4332(97)00111-6.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0008-BB51-A Version Permalink: https://hdl.handle.net/21.11116/0000-0008-BB52-9
Genre: Journal Article

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 Creators:
Chassé, T.1, Author
Neuhold, G.1, Author
Paggel, Jens2, Author           
Horn, Karsten2, Author           
Affiliations:
1Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstr. 2, D-04103 Leipzig, Germany, ou_persistent22              
2Fritz Haber Institute, Max Planck Society, ou_24021              

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 Abstract: Interface reaction, morphology and electronic properties of the Sn/GaP(110) interface have been studied using photoelectron spectroscopy, LEED and SEM. A weak reaction has been observed by photoemission, which was confined to just the interface bonds. The growth of the tin film proceeds by the Stranski-Krastanov mode. On an about two monolayer thick, ordered layer of tin 3D islands grow, which exhibit metallic properties. Surface photovoltage effects including significant flux dependence have been observed up to such high nominal coverages as 100 nm. They have been used to predict the semiconducting nature of the initial tin wetting layer.

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Language(s): eng - English
 Dates: 1997-01-061997-02-031997-08
 Publication Status: Issued
 Pages: 10
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/S0169-4332(97)00111-6
 Degree: -

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Title: Applied Surface Science
  Abbreviation : Appl. Surf. Sci.
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier B.V.
Pages: 10 Volume / Issue: 115 (4) Sequence Number: - Start / End Page: 326 - 335 Identifier: ISSN: 0169-4332
CoNE: https://pure.mpg.de/cone/journals/resource/954928576736