Correlation hard gap in antidot graphene

Pan, Jie; Yeh, Sheng-Shiuan; Zhang, Haijing; Rees, David G.; Zhang, Ting; Zhang, Bing; Lin, Juhn-Jong; Sheng, Ping

doi:10.1103/PhysRevB.103.235114

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Correlation hard gap in antidot graphene

Pan, J., Yeh, S.-S., Zhang, H., Rees, D. G., Zhang, T., Zhang, B., et al. (2021). Correlation hard gap in antidot graphene. Physical Review B, 103(23): 235114, pp. 1-8. doi:10.1103/PhysRevB.103.235114.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0008-C27F-F Version Permalink: https://hdl.handle.net/21.11116/0000-0008-C280-B

Genre: Journal Article

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Creators:
Pan, Jie¹, Author
Yeh, Sheng-Shiuan¹, Author
Zhang, Haijing², Author
Rees, David G.¹, Author
Zhang, Ting¹, Author
Zhang, Bing¹, Author
Lin, Juhn-Jong¹, Author
Sheng, Ping¹, Author

Affiliations:
1External Organizations, ou_persistent22
2Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462

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Language(s): eng - English

Dates: Published Online: 2021-06-08Published in Print: 2021-06-08

Publication Status: Published in print

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Identifiers: DOI: 10.1103/PhysRevB.103.235114

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Title: Physical Review B

Abbreviation : Phys. Rev. B

Source Genre: Journal

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Publ. Info: Woodbury, NY : American Physical Society

Pages: - Volume / Issue: 103 (23) Sequence Number: 235114 Start / End Page: 1 - 8 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008