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  Observation of the critical state to multiple-type Dirac semimetal phases in KMgBi

Liu, D. F., Wei, L. Y., Le, C. C., Wang, H. Y., Zhang, X., Kumar, N., et al. (2021). Observation of the critical state to multiple-type Dirac semimetal phases in KMgBi. Journal of Applied Physics, 129(23): 235109, pp. 1-7. doi:10.1063/5.0045466.

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 Urheber:
Liu, D. F.1, Autor
Wei, L. Y.1, Autor
Le, C. C.2, Autor           
Wang, H. Y.1, Autor
Zhang, X.1, Autor
Kumar, N.2, Autor           
Shekhar, C.3, Autor           
Schröter, N. B. M.1, Autor
Li, Y. W.1, Autor
Pei, D.1, Autor
Xu, L. X.1, Autor
Dudin, P.1, Autor
Kim, T. K.1, Autor
Cacho, C.1, Autor
Fujii, J.1, Autor
Vobornik, I.1, Autor
Wang, M. X.1, Autor
Yang, L. X.1, Autor
Liu, Z. K.1, Autor
Guo, Y. F.1, Autor
Hu, J. P.1, AutorFelser, C.4, Autor           Parkin, S. S. P.1, AutorChen, Y. L.1, Autor mehr..
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863428              
4Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

Inhalt

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Schlagwörter: Bismuth alloys, Critical current density (superconductivity), Crystal structure, Electronic structure, Energy gap, Magnesium alloys, Magnesium metallography, Photoelectron spectroscopy, Potassium alloys, Scanning tunneling microscopy, Ternary alloys, Critical state, Dirac fermions, Flat band, Small bandgap, Systematic study, Bismuth metallography
 Zusammenfassung: Dirac semimetals are classified into different phases based on the types of Dirac fermions. Tuning the transition among different types of Dirac fermions in one system remains a challenge. Recently, KMgBi was predicted to be located at a critical state in which various types of Dirac fermions can be induced owing to the existence of a flatband. Here, we carried out systematic studies on the electronic structure of KMgBi single crystals by combining angle-resolve photoemission spectroscopy and scanning tunneling microscopy/spectroscopy. The flatband was clearly observed near the Fermi level. We also revealed a small bandgap of ∼20 meV between the flatband and the conduction band. These results demonstrate the critical states of KMgBi that transition among various types of Dirac fermions can be tuned in one system. © 2021 Author(s).

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Sprache(n): eng - English
 Datum: 2021-06-182021-06-18
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: DOI: 10.1063/5.0045466
 Art des Abschluß: -

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Titel: Journal of Applied Physics
  Kurztitel : J. Appl. Phys.
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: New York, NY : AIP Publishing
Seiten: - Band / Heft: 129 (23) Artikelnummer: 235109 Start- / Endseite: 1 - 7 Identifikator: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880