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  Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

Piva, M. M., Rahn, M. C., Thomas, S. M., Scott, B. L., Pagliuso, P. G., Thompson, J. D., et al. (2021). Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6. Chemistry of Materials, 33, 4122-4127. doi:10.1021/acs.chemmater.1c00797.

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 Creators:
Piva, Mario M.1, Author              
Rahn, Marein C.2, Author
Thomas, Sean M.2, Author
Scott, Brian L.2, Author
Pagliuso, Pascoal G.2, Author
Thompson, Joe D.2, Author
Schoop, Leslie M.2, Author
Ronning, Filip2, Author
Rosa, Priscila F. S.2, Author
Affiliations:
1Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462              
2External Organizations, ou_persistent22              

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Free keywords: Arsenic compounds, Cadmium compounds, Cadmium metallography, Cerium compounds, Ground state, Lanthanum, Lanthanum compounds, Single crystals, Long wavelength, Narrow-gap semiconductors, Nontrivial topology, Orders of magnitude, Parent structure, Semiconducting behavior, Single crystal x-ray diffraction, Synthesis and characterizations, Narrow band gap semiconductors
 Abstract: Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an I4/mmm parent structure are promising clean narrow-gap semiconductors. © 2021 American Chemical Society.

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Language(s): eng - English
 Dates: 2021-05-172021-05-17
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1021/acs.chemmater.1c00797
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Title: Chemistry of Materials
  Abbreviation : Chem. Mater.
Source Genre: Journal
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Publ. Info: Washington, D.C. : American Chemical Society
Pages: - Volume / Issue: 33 Sequence Number: - Start / End Page: 4122 - 4127 Identifier: ISSN: 0897-4756
CoNE: https://pure.mpg.de/cone/journals/resource/954925561571