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  The Breathing-Mode Distortion around Transition-Metal Defects in Semiconductors

Biernacki, S. W., & Schulz, H.-J. (1997). The Breathing-Mode Distortion around Transition-Metal Defects in Semiconductors. Physica Status Solidi B, 200(1), 173-180. doi:10.1002/1521-3951(199703)200:1<173:AID-PSSB173>3.0.CO;2-3.

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 Creators:
Biernacki, S. W.1, 2, Author           
Schulz, Hans-Joachim3, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              
2Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02-668 Warsaw, Poland, ou_persistent22              
3Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              

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 Abstract: The breathing-type distortion around transition-metal ions incorporated into semiconductors is determined in the approximation where the ligands are treated as point charges. It is shown how the crystal-field parameter can be found along with the value of the breathing-mode distortion energy from zero-phonon line measurements. The change of the transition-metal–ligand distance with respect to the equilibrium distance of the perfect crystal is also calculated.

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Language(s): eng - English
 Dates: 1997-03
 Publication Status: Issued
 Pages: 8
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Degree: -

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Title: Physica Status Solidi B
  Abbreviation : Phys. Status Solidi B
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: 8 Volume / Issue: 200 (1) Sequence Number: - Start / End Page: 173 - 180 Identifier: ISSN: 0370-1972
CoNE: https://pure.mpg.de/cone/journals/resource/958480240330