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  Vortex-oriented ferroelectric domains in SnTe/PbTe monolayer lateral heterostructures

Chang, K., Villanova, J. W. D., Ji, J.-R., Das, S., Küster, F., Barraza-Lopez, S., et al. (2021). Vortex-oriented ferroelectric domains in SnTe/PbTe monolayer lateral heterostructures. Advanced Materials, 33(32): 2102267. doi:10.1002/adma.202102267.

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https://doi.org/10.1002/adma.202102267 (Publisher version)
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 Creators:
Chang, Kai1, Author
Villanova, John W. D.2, Author
Ji, Jing-Rong1, 3, Author           
Das, Souvik1, 3, Author           
Küster, Felix1, Author           
Barraza-Lopez, Salvador2, Author
Sessi, Paolo1, Author           
Parkin, Stuart S. P.1, Author           
Affiliations:
1Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society, ou_3287476              
2External Organizations, ou_persistent22              
3International Max Planck Research School for Science and Technology of Nano-Systems, Max Planck Institute of Microstructure Physics, Max Planck Society, Weinberg 2, 06120 Halle (Saale), Germany, ou_3399928              

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 Abstract: Heterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type-II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex-oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first-principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group-IV monochalcogenides on in-plane ferroelectric heterostructures a step closer.

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 Dates: 2021-07-032021-08-12
 Publication Status: Published in print
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 Identifiers: ISI: 000669241900001
DOI: 10.1002/adma.202102267
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Title: Advanced Materials
  Other : Adv. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: 33 (32) Sequence Number: 2102267 Start / End Page: - Identifier: ISSN: 0935-9648
CoNE: https://pure.mpg.de/cone/journals/resource/954925570855