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  Quantum Oscillations in Ferromagnetic (Sb, V)2Te3 Topological Insulator Thin Films

Zhang, L., Helm, T., Lin, H., Fan, F., Le, C., Sun, Y., et al. (2021). Quantum Oscillations in Ferromagnetic (Sb, V)2Te3 Topological Insulator Thin Films. Advanced Materials, (33): 2102107, pp. 1-8. doi:10.1002/adma.202102107.

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 Creators:
Zhang, Liguo1, Author           
Helm, Toni2, Author
Lin, Haicheng1, Author           
Fan, Fengren1, Author           
Le, Congcong1, Author           
Sun, Yan1, Author           
Markou, Anastasios1, Author           
Felser, Claudia3, Author           
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2External Organizations, ou_persistent22              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: An effective way of manipulating 2D surface states in magnetic topological insulators may open a new route for quantum technologies based on the quantum anomalous Hall effect. The doping-dependent evolution of the electronic band structure in the topological insulator Sb2-xVxTe3 (0 <= x <= 0.102) thin films is studied by means of electrical transport. Sb2-xVxTe3 thin films were prepared by molecular beam epitaxy, and Shubnikov-de Hass (SdH) oscillations are observed in both the longitudinal and transverse transport channels. Doping with the 3d element, vanadium, induces long-range ferromagnetic order with enhanced SdH oscillation amplitudes. The doping effect is systematically studied in various films depending on thickness and bottom gate voltage. The angle-dependence of the SdH oscillations reveals their 2D nature, linking them to topological surface states as their origin. Furthermore, it is shown that vanadium doping can efficiently modify the band structure. The tunability by doping and the coexistence of the surface states with ferromagnetism render Sb2-xVxTe3 thin films a promising platform for energy band engineering. In this way, topological quantum states may be manipulated to crossover from quantum Hall effect to quantum anomalous Hall effect, which opens an alternative route for the design of quantum electronics and spintronics.

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Language(s): eng - English
 Dates: 2021-08-312021-08-31
 Publication Status: Published in print
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 Rev. Type: -
 Identifiers: ISI: 000693931700001
DOI: 10.1002/adma.202102107
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Title: Advanced Materials
  Other : Adv. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: (33) Sequence Number: 2102107 Start / End Page: 1 - 8 Identifier: ISSN: 0935-9648
CoNE: https://pure.mpg.de/cone/journals/resource/954925570855