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  The Intermetallic Semiconductor ht-IrGa3: a Material in the in-Transformation State

Cardoso-Gil, R., Zelenina, I., Stahl, Q. E., Bobnar, M., Koželj, P., Krnel, M., et al. (2022). The Intermetallic Semiconductor ht-IrGa3: a Material in the in-Transformation State. ACS Materials AU, 2(1), 45-54. doi:10.1021/acsmaterialsau.1c00025.

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 Creators:
Cardoso-Gil, Raúl1, Author           
Zelenina, Iryna2, Author           
Stahl, Quirin E.3, Author
Bobnar, Matej2, Author           
Koželj, Primož2, Author           
Krnel, Mitja2, Author           
Burkhardt, Ulrich4, Author           
Veremchuk, Igor5, Author           
Simon, Paul6, Author           
Carrillo-Cabrera, Wilder2, Author           
Boström, Magnus2, Author           
Grin, Yuri7, Author           
Affiliations:
1Raul Cardoso, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863420              
2Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863405              
3External Organizations, ou_persistent22              
4Ulrich Burkhardt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863422              
5Igor Veremchuk, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863411              
6Paul Simon, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863418              
7Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              

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 Abstract: The compound IrGa3 was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group P42/mnm, No. 136) with a = 6.4623(1) Å and c = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of ht-IrGa3 is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for ht-IrGa3 and for the solid solution IrGa3–xZnx.

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Language(s): eng - English
 Dates: 2022-01-232022-01-23
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1021/acsmaterialsau.1c00025
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Title: ACS Materials AU
Source Genre: Journal
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Publ. Info: American Chemical Society
Pages: - Volume / Issue: 2 (1) Sequence Number: - Start / End Page: 45 - 54 Identifier: -