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要旨:
Cu2OSeO3 single crystals are grown with an optimized chemical vapor transport technique using SeCl4 as a transport agent (TA). The optimized growth method allows to selectively produce large high-quality single crystals. The method is shown to consistently produce Cu2OSeO3 crystals of maximum size 8 x 7 x 4 mm with a transport duration of around three weeks. It is found that this method, with SeCl4 as TA, is more efficient and simple compared with the commonly used growth techniques reported in literature with HCl gas as TA. The Cu2OSeO3 crystals have very high quality and their absolute structures are fully determined by simple single-crystal X-ray diffraction. Enantiomeric crystals with either left- or right-handed chiralities are observed. The magnetization and ferromagnetic resonance data show the same magnetic phase diagram as reported earlier.
