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  Energy levels of vanadium ions in CdTe

Peka, P., Lehr, M. U., Schulz, H.-J., Schwarz, R., & Benz, K. W. (1994). Energy levels of vanadium ions in CdTe. Applied Physics A, 58, 447-451. doi:10.1007/BF00332435.

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 Creators:
Peka, Pavel1, Author           
Lehr, M. U.1, Author           
Schulz, Hans-Joachim1, Author           
Schwarz, R.2, Author
Benz, K. W.2, Author
Affiliations:
1Fritz Haber Institute, Max Planck Society, ou_24021              
2Kristallographisches Institut der Universität Freiburg, Hebelstrasse 25, D-79104, Freiburg, Germany, ou_persistent22              

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 Abstract: In CdTe doped with vanadium the photoluminescence due to the 3 T 2(F) → 3 A 2(F) transition of V3+(d 2) is detected. Its decay time is determined as (630±20) μs, a result comparable to the analogous emissions in various host lattices. Further emissions around 5000 cm−1 and 9000 cm−1 are caused by charge-transfer transitions or bound-exciton decay. Excitation and sensitization spectra yield information on the positions of the energy levels within the gap, which are discussed using two different models. At T=4.2 K, the distance of the V2+/V3+ donor level is 7300 cm−1 and 5700 cm−1 referred to the valence and the conduction band edges, respectively. The absence of V2+(d 3) centres is tentatively ascribed to the existence of deeply bound excitons.

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Language(s): eng - English
 Dates: 1993-12-141994-01-181994-05
 Publication Status: Issued
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1007/BF00332435
 Degree: -

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Title: Applied Physics A
  Abbreviation : Appl. Phys. A
Source Genre: Journal
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Publ. Info: Heidelberg : Springer-Verlag Heidelberg
Pages: 5 Volume / Issue: 58 Sequence Number: - Start / End Page: 447 - 451 Identifier: ISSN: 0947-8396
CoNE: https://pure.mpg.de/cone/journals/resource/954928582869_1