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  The Zeeman effect on bound-exciton states of indium-related complex centres in CdTe

Zimmermann, H., Boyn, R., Lehr, M. U., Schulz, H.-J., Rudolph, P., & Kornack, J.-T. (1994). The Zeeman effect on bound-exciton states of indium-related complex centres in CdTe. Semiconductor Science and Technology, 9, 1598-1603. doi:10.1088/0268-1242/9/9/005.

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Zimmermann, H.1, Author
Boyn, R.1, Author
Lehr, M. U.2, Author           
Schulz, Hans-Joachim2, Author           
Rudolph, P.1, Author
Kornack, J.-T.1, Author
Affiliations:
1Inst. fur Phys., Humboldt-Univ., Berlin, Germany, ou_persistent22              
2Fritz Haber Institute, Max Planck Society, ou_24021              

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 Abstract: The PL spectrum of In-doped CdTe is known to exhibit, in many cases, a characteristic feature (the 'W line') at about 12780 cm-1 ( approximately=1.584 eV), for which there are contradictory assignments in the literature. Using bulk CdTe:In crystals we have found that this feature appears after heat treatment in a Te atmosphere, accompanied by a decrease in the D0X emission. We have measured the Zeeman effect on the W line, including its dependence on the directions of magnetic field and polarization. These data show that this line originates from the annihilation of a two-particle bound exciton localized at trigonal complexes with symmetry axes parallel to the (111) directions. By analysing level splittings and relative transition probabilities on the basis of a standard spin Hamiltonian it is found that the trigonal impurity potential is due to a 'tensional' lattice deformation and the Zeeman spectra can be described quantitatively by the parameters ge=-1.7, K=1.08, L=-0.1 and a=0. Together with the magnitude of the diamagnetic shift, these values show that in the bound excitons the electron orbitals are rather extended and the hole orbitals are rather localized. Ini-VCd, Ini-ACd, or Ini-3ACd complexes (A being small-size acceptor impurities such as Li or Na) are considered to be the most probable candidates for the centres giving rise to the W line.

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Language(s): eng - English
 Dates: 1994
 Publication Status: Issued
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1088/0268-1242/9/9/005
 Degree: -

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Title: Semiconductor Science and Technology
  Other : Semicond. Sci. Technol.
Source Genre: Journal
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Publ. Info: Bristol : IOP Pub.
Pages: 7 Volume / Issue: 9 Sequence Number: - Start / End Page: 1598 - 1603 Identifier: ISSN: 0268-1242
CoNE: https://pure.mpg.de/cone/journals/resource/954925500147